Europe High Electron Mobility Transistor Market Size, Share & Industry Trends Analysis Report By Type (Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs), and Others), By End-Use, By Country and Growth Forecast, 2023 - 2030

Europe High Electron Mobility Transistor Market Size, Share & Industry Trends Analysis Report By Type (Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs), and Others), By End-Use, By Country and Growth Forecast, 2023 - 2030

The Europe High Electron Mobility Transistor Market would witness market growth of 6.8% CAGR during the forecast period (2023-2030).

The satellite communication industry has witnessed a significant integration of HEMTs due to their ability to operate at microwave and millimeter-wave frequencies. High electron mobility transistors play a crucial role in satellite transponders, enabling the amplification and processing of signals in the challenging conditions of space communication. HEMTs have found a prominent place in radar systems and defense applications. Their high electron mobility allows for the swift processing of signals in radar applications, enhancing the capabilities of defense systems for surveillance, target tracking, and threat detection. In medical electronics, HEMTs contribute to the development of advanced imaging devices. Their high-speed operation and low noise characteristics make them well-suited for applications such as magnetic resonance imaging (MRI) and other diagnostic tools where precision and speed are paramount.

HEMTs, including smartphones and base station equipment, are pivotal in wireless communication devices. Their high-frequency operation and power efficiency make them ideal for amplifiers and switches in wireless networks, contributing to seamless data transmission. Satellite transponders rely on HEMTs for amplification and processing in challenging space environments. HEMTs ensure the reliability and efficiency of satellite communication, facilitating connectivity and data transmission.

Moreover, the defense sector extensively employs HEMTs in radar systems and military electronics. Their rapid signal-processing capabilities enhance the performance of radar applications, providing critical functionalities for surveillance, target tracking, and communication in defense operations. HEMTs contribute to advancing medical imaging equipment, such as MRI machines and other diagnostic tools. The high-speed operation of HEMTs enables the precise and rapid processing of signals in medical applications, supporting accurate diagnostics.

As per the data released by the International Trade Administration, out of a total of €55.2 billion in non-consolidated aerospace and defense revenues, the civil aerospace industry of France reported revenue increased marginally to €35.66 billion in 2021. The rising demand in the aerospace industry in Europe will boost the demand for satellite communication equipment in the region, which will help expand the regional market.

The Germany market dominated the Europe High Electron Mobility Transistor Market, by Country in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $557 Million by 2030. The UK market is registering a CAGR of 5.8% during (2023 - 2030). Additionally, The France market would showcase a CAGR of 7.7% during (2023 - 2030).

Based on Type, the market is segmented into Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs), and Others. Based on End-Use, the market is segmented into Consumer Electronics, Automotive, Industrial, Aerospace & Defense, and Others. Based on countries, the market is segmented into Germany, UK, France, Russia, Spain, Italy, and Rest of Europe.

The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Qorvo, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., WOLFSPEED, INC., Texas Instruments, Inc., Sumitomo Electric Industries, Ltd., Analog Devices, Inc., Intel Corporation, NXP Semiconductors N.V., Mitsubishi Electric Corporation

Scope of the Study

Market Segments covered in the Report:

By Type

• Gallium Nitride (GaN)
• Silicon Carbide (SiC)
• Gallium Arsenide (GaAs)
• Others

By End-Use

• Consumer Electronics
• Automotive
• Industrial
• Aerospace & Defense
• Others

By Country

• Germany
• UK
• France
• Russia
• Spain
• Italy
• Rest of Europe

Companies Profiled

• Qorvo, Inc.
• Infineon Technologies AG
• MACOM Technology Solutions Holdings, Inc.
• WOLFSPEED, INC.
• Texas Instruments, Inc.
• Sumitomo Electric Industries, Ltd.
• Analog Devices, Inc.
• Intel Corporation
• NXP Semiconductors N.V.
• Mitsubishi Electric Corporation

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