Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market: Global Industry Analysis, Trends, Market Size, and Forecasts up to 2028
The report on the global insulated gate bipolar transistors and metal oxide field effect transistor market provides qualitative and quantitative analysis for the period from 2020 to 2028. The report predicts the global insulated gate bipolar transistors and metal oxide field effect transistor market to grow with a significant CAGR over the forecast period from 2022-2028. The study on insulated gate bipolar transistors and metal oxide field effect transistor market covers the analysis of the leading geographies such as North America, Europe, Asia-Pacific, and RoW for the period of 2020 to 2028.
The report on insulated gate bipolar transistors and metal oxide field effect transistor market is a comprehensive study and presentation of drivers, restraints, opportunities, demand factors, market size, forecasts, and trends in the global insulated gate bipolar transistors and metal oxide field effect transistor market over the period of 2020 to 2028. Moreover, the report is a collective presentation of primary and secondary research findings.
Porter's five forces model in the report provides insights into the competitive rivalry, supplier and buyer positions in the market and opportunities for the new entrants in the global insulated gate bipolar transistors and metal oxide field effect transistor market over the period of 2020 to 2028. Further, IGR- Growth Matrix gave in the report brings an insight into the investment areas that existing or new market players can consider.
Report Findings
1) Drivers
Rising applications of IGBT
Rising household appliances consumption
Increasing adoption of electric vehicles
2) Restraints
Latch up issue in IGBT
3) Opportunities
Proactive government initiatives to establish HVDCS and intelligent grids.
Demand for consumer electronics
Research Methodology
A) Primary Research
Our primary research involves extensive interviews and analysis of the opinions provided by the primary respondents. The primary research starts with identifying and approaching the primary respondents, the primary respondents are approached include
1. Key Opinion Leaders associated with Infinium Global Research
2. Internal and External subject matter experts
3. Professionals and participants from the industry
Our primary research respondents typically include
1. Executives working with leading companies in the market under review
2. Product/brand/marketing managers
3. CXO level executives
4. Regional/zonal/ country managers
5. Vice President level executives.
B) Secondary Research
Secondary research involves extensive exploring through the secondary sources of information available in both the public domain and paid sources. At Infinium Global Research, each research study is based on over 500 hours of secondary research accompanied by primary research. The information obtained through the secondary sources is validated through the crosscheck on various data sources.
The secondary sources of the data typically include
1. Company reports and publications
2. Government/institutional publications
3. Trade and associations journals
4. Databases such as WTO, OECD, World Bank, and among others.
5. Websites and publications by research agencies
Segment Covered
The global insulated gate bipolar transistors and metal oxide field effect transistor market is segmented on the basis of type, power rating, and application.
The Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
Discrete IGBT
IGBT Modules
The Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
High Power
Medium Power
Low Power
The Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
Energy and Power
Consumer Electronics
Inverter and UPS
Electrical Vehicle
Industrial System
Others
Company Profiles
The companies covered in the report include
Infineon Technology
Mitsubishi Electric
ABB Ltd.
Toshiba Corporation
Renesas Electronics Corporation
STMicroelectronics N.V.
Fuji Electric
Hitachi, Ltd.
ROHM Semiconductor
NXP Semiconductor N.V.
What does this Report Deliver?
1. Comprehensive analysis of the global as well as regional markets of the insulated gate bipolar transistors and metal oxide field effect transistor market.
2. Complete coverage of all the segments in the insulated gate bipolar transistors and metal oxide field effect transistor market to analyze the trends, developments in the global market and forecast of market size up to 2028.
3. Comprehensive analysis of the companies operating in the global insulated gate bipolar transistors and metal oxide field effect transistor market. The company profile includes analysis of product portfolio, revenue, SWOT analysis and latest developments of the company.
4. IGR- Growth Matrix presents an analysis of the product segments and geographies that market players should focus to invest, consolidate, expand and/or diversify.
- 1. Preface
- 1.1. Report Description
- 1.2. Research Methods
- 1.3. Research Approaches
- 2. Executive Summary
- 2.1. Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Highlights
- 2.2. Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Projection
- 2.3. Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Regional Highlights
- 3. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Overview
- 3.1. Introduction
- 3.2. Market Dynamics
- 3.2.1. Drivers
- 3.2.2. Restraints
- 3.2.3. Opportunities
- 3.3. Analysis of COVID-19 impact on the Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market
- 3.4. Porter's Five Forces Analysis
- 3.5. IGR-Growth Matrix Analysis
- 3.5.1. IGR-Growth Matrix Analysis by Type
- 3.5.2. IGR-Growth Matrix Analysis by Power Rating
- 3.5.3. IGR-Growth Matrix Analysis by Application
- 3.5.4. IGR-Growth Matrix Analysis by Region
- 3.6. Value Chain Analysis of Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market
- 4. Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market Macro Indicator Analysis
- 5. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
- 5.1. Discrete IGBT
- 5.2. IGBT Modules
- 6. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
- 6.1. High Power
- 6.2. Medium Power
- 6.3. Low Power
- 7. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
- 7.1. Energy and Power
- 7.2. Consumer Electronics
- 7.3. Inverter and UPS
- 7.4. Electrical Vehicle
- 7.5. Industrial System
- 7.6. Others
- 8. Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Region 2022-2028
- 8.1. North America
- 8.1.1. North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
- 8.1.2. North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
- 8.1.3. North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
- 8.1.4. North America Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Country
- 8.2. Europe
- 8.2.1. Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
- 8.2.2. Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
- 8.2.3. Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
- 8.2.4. Europe Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Country
- 8.3. Asia-Pacific
- 8.3.1. Asia-Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
- 8.3.2. Asia-Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
- 8.3.3. Asia-Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
- 8.3.4. Asia-Pacific Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Country
- 8.4. RoW
- 8.4.1. RoW Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Type
- 8.4.2. RoW Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Power Rating
- 8.4.3. RoW Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Application
- 8.4.4. RoW Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market by Sub-region
- 9. Company Profiles and Competitive Landscape
- 9.1. Competitive Landscape in the Global Insulated Gate Bipolar Transistors and Metal Oxide Field Effect Transistor Market
- 9.2. Companies Profiles
- 9.2.1. Infineon Technology
- 9.2.2. Mitsubishi Electric
- 9.2.3. ABB Ltd.
- 9.2.4. Toshiba Corporation
- 9.2.5. Renesas Electronics Corporation
- 9.2.6. STMicroelectronics N.V.
- 9.2.7. Fuji Electric
- 9.2.8. Hitachi, Ltd.
- 9.2.9. ROHM Semiconductor
- 9.2.10. NXP Semiconductor N.V.
Research Assistance
Learn how to effectively navigate the market research process to help guide your organization on the journey to success.
Download eBook