Global GaN RF Devices Market 2024-2028

Global GaN RF Devices Market 2024-2028

The gan rf devices market is forecasted to grow by USD 1610 mn during 2023-2028, accelerating at a CAGR of 17.42% during the forecast period. The report on the gan rf devices market provides a holistic analysis, market size and forecast, trends, growth drivers, and challenges, as well as vendor analysis covering around 25 vendors.

The report offers an up-to-date analysis regarding the current market scenario, the latest trends and drivers, and the overall market environment. The market is driven by increasing use in broadcasting applications, growing infrastructural development for 5g cellular networks, and growing demand from the military and defense sector.

Technavio's gan rf devices market is segmented as below:

• By Application
• Cellular infrastructure
• Defense and military
• CATV
• Others
• By Material
• GaN-on-Si
• GaN-on-SiC
• GaN-on-Diamond
• By Geography
• APAC
• Europe
• North America
• South America
• Middle East and Africa

This study identifies the growing prominence of gan-on-diamond as one of the prime reasons driving the gan rf devices market growth during the next few years. Also, augmented use of IoT in gan rf devices and emergence of high-powered electronic devices will lead to sizable demand in the market.

The report on the gan rf devices market covers the following areas:

• Gan rf devices market sizing
• Gan rf devices market forecast
• Gan rf devices market industry analysis

The robust vendor analysis is designed to help clients improve their market position, and in line with this, this report provides a detailed analysis of several leading gan rf devices market vendors that include Ampleon Netherlands BV, Broadcom Inc., Fujitsu Ltd., GaN Systems, Infineon Technologies AG, Integra Technologies Inc., MACOM Technology Solutions Inc., Microchip Technology Inc., Mitsubishi Electric Corp., Northrop Grumman Corp., NXP Semiconductors NV, Qorvo Inc., Raytheon Technologies Corp., RFHIC Corp., STMicroelectronics International N.V., Sumitomo Electric Industries Ltd., Texas Instruments Inc., Toshiba Corp., United Monolithic Semiconductors Holding SAS, and NTT Advanced Technology Corp.. Also, the gan rf devices market analysis report includes information on upcoming trends and challenges that will influence market growth. This is to help companies strategize and leverage all forthcoming growth opportunities.

The study was conducted using an objective combination of primary and secondary information including inputs from key participants in the industry. The report contains a comprehensive market and vendor landscape in addition to an analysis of the key vendors.

The publisher presents a detailed picture of the market by the way of study, synthesis, and summation of data from multiple sources by an analysis of key parameters such as profit, pricing, competition, and promotions. It presents various market facets by identifying the key industry influencers. The data presented is comprehensive, reliable, and a result of extensive research - both primary and secondary. The market research reports provide a complete competitive landscape and an in-depth vendor selection methodology and analysis using qualitative and quantitative research to forecast the accurate market growth.