Global SiC Wafer and Epitaxy Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

Global SiC Wafer and Epitaxy Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029


According to our (Global Info Research) latest study, the global SiC Wafer and Epitaxy market size was valued at USD million in 2022 and is forecast to a readjusted size of USD million by 2029 with a CAGR of % during review period. The influence of COVID-19 and the Russia-Ukraine War were considered while estimating market sizes.

SiC wafers are used as the foundation for SiC-based devices, such as power MOSFETs, Schottky diodes, and bipolar junction transistors. Compared to silicon wafers, SiC wafers offer a number of advantages, including higher power density, higher temperature tolerance, and higher switching speeds. As a result, SiC wafers are becoming increasingly popular in applications such as electric vehicles, renewable energy systems, and industrial automation.



SiC epitaxy, on the other hand, is the process of depositing a layer of SiC onto a substrate, typically a SiC wafer. Epitaxy is used to create highly uniform and pure SiC films, which are used in the production of high-performance SiC devices. SiC epitaxy is a critical step in the production of SiC-based devices, and the market for this material is expected to grow rapidly in the coming years.



Geographically, the SiC wafer and epitaxy market is dominated by Asia-Pacific, particularly China and Japan, due to the presence of a large number of semiconductor manufacturers in the region. The increasing demand for electric vehicles and renewable energy systems in China is driving the growth of the SiC wafer and epitaxy market in the region.



In addition to traditional semiconductor applications, SiC wafers and epitaxy are also finding new applications in the fields of optoelectronics and biotechnology. SiC-based optical sensors and emitters are highly resistant to high temperatures and harsh environments, making them ideal for use in aerospace, automotive, and industrial applications. SiC-based biosensors, on the other hand, offer high sensitivity and selectivity, making them ideal for use in medical and environmental monitoring applications.



In conclusion, the SiC wafer and epitaxy market is rapidly growing, driven by the increasing demand for high-performance SiC-based devices in a range of industries. The market is dominated by Asia-Pacific, with China and Japan being the major consumers of SiC wafers and epitaxy. With the ongoing development of new applications for SiC-based materials, the market for SiC wafers and epitaxy is expected to continue growing in the coming years.

Silicon carbide (SiC) is a compound semiconductor material with unique properties that make it highly desirable for a range of electronic applications, including power electronics, communication systems, and sensors. SiC wafers and epitaxy are key components in the production of SiC-based devices, and the market for these materials is rapidly growing.

This report is a detailed and comprehensive analysis for global SiC Wafer and Epitaxy market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2023, are provided.

Key Features:

Global SiC Wafer and Epitaxy market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2018-2029

Global SiC Wafer and Epitaxy market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2018-2029

Global SiC Wafer and Epitaxy market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2018-2029

Global SiC Wafer and Epitaxy market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2018-2023

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for SiC Wafer and Epitaxy

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global SiC Wafer and Epitaxy market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Wolfspeed, SK Siltron, ROHM Group (SiCrystal), Coherent and Resonac, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals, COVID-19 and Russia-Ukraine War Influence.

Market Segmentation

SiC Wafer and Epitaxy market is split by Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
4 Inch
6 Inch
8 Inch

Market segment by Application
Power Device
Electronics & Optoelectronics
Wireless Infrastructure
Others

Major players covered
Wolfspeed
SK Siltron
ROHM Group (SiCrystal)
Coherent
Resonac
STMicroelectronics
TankeBlue
SICC
Hebei Synlight Crystal
CETC
San'an Optoelectronics

Market segment by region, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe SiC Wafer and Epitaxy product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of SiC Wafer and Epitaxy, with price, sales, revenue and global market share of SiC Wafer and Epitaxy from 2018 to 2023.

Chapter 3, the SiC Wafer and Epitaxy competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the SiC Wafer and Epitaxy breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2018 to 2029.

Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2018 to 2029.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2017 to 2022.and SiC Wafer and Epitaxy market forecast, by regions, type and application, with sales and revenue, from 2024 to 2029.

Chapter 12, market dynamics, drivers, restraints, trends, Porters Five Forces analysis, and Influence of COVID-19 and Russia-Ukraine War.

Chapter 13, the key raw materials and key suppliers, and industry chain of SiC Wafer and Epitaxy.

Chapter 14 and 15, to describe SiC Wafer and Epitaxy sales channel, distributors, customers, research findings and conclusion.


1 Market Overview
2 Manufacturers Profiles
3 Competitive Environment: SiC Wafer and Epitaxy by Manufacturer
4 Consumption Analysis by Region
5 Market Segment by Type
6 Market Segment by Application
7 North America
8 Europe
9 Asia-Pacific
10 South America
11 Middle East & Africa
12 Market Dynamics
13 Raw Material and Industry Chain
14 Shipments by Distribution Channel
15 Research Findings and Conclusion
16 Appendix

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