Global Semiconductor Discrete Devices Market 2024 by Company, Regions, Type and Application, Forecast to 2030

Global Semiconductor Discrete Devices Market 2024 by Company, Regions, Type and Application, Forecast to 2030

Discrete power devices refer to electronic devices with individual functions and functions that cannot be disassembled. According to different chip structures and functions, they can be divided into diodes, triodes, bridge rectifiers, thyristors, etc., and can be divided from the perspective of power dissipation (or rated current) For small signal devices, power devices. Discrete power devices are electronic devices based on semiconductor materials with fixed single characteristics and functions. The device is mainly composed of a chip, a lead/frame, and a plastic casing. The chip determines device functions, such as rectification, voltage stabilization, switching, protection, etc. The lead/frame realizes the connection between the chip and the external circuit and the heat export. Provide protection for the chip and internal structure, ensure the stable realization of its functions, and are highly related to core performance such as heat dissipation.

According to our (Global Info Research) latest study, the global Semiconductor Discrete Devices market size was valued at US$ 36300 million in 2023 and is forecast to a readjusted size of USD 62510 million by 2030 with a CAGR of 7.5% during review period.

The global semiconductor discrete production region mainly distributes in North America, Europe, China, Japan, South Korea, Taiwan (China), Southeast Asia, etc, and high-end products are mainly dominated by European, North American and Chinese manufacturers, the key manufacturers are Infineon, ON Semiconductor, ST Microelectronics, Mitsubishi Electric (Vincotech), Nexperia, Vishay Technology, Toshiba, Fuji Electric, Renesas Electronics and Diodes Incorporated. The top four vendors together account for more than 35% of the market share, with the largest vendor being Nexperia, accounting for 15% of the market share. In terms of product classification, MOSFET have the largest market share with 35%, followed by IGBT and diodes. In terms of its application areas, the automotive industry is its top application area, accounting for 35% of the market share, followed by the grid and energy sector, accounting for 25%.

This report is a detailed and comprehensive analysis for global Semiconductor Discrete Devices market. Both quantitative and qualitative analyses are presented by company, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2024, are provided.

Key Features:

Global Semiconductor Discrete Devices market size and forecasts, in consumption value ($ Million), 2019-2030

Global Semiconductor Discrete Devices market size and forecasts by region and country, in consumption value ($ Million), 2019-2030

Global Semiconductor Discrete Devices market size and forecasts, by Type and by Application, in consumption value ($ Million), 2019-2030

Global Semiconductor Discrete Devices market shares of main players, in revenue ($ Million), 2019-2024

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for Semiconductor Discrete Devices

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global Semiconductor Discrete Devices market based on the following parameters - company overview, revenue, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, onsemi, STMicroelectronics, Mitsubishi Electric (Vincotech), Nexperia, Vishay Intertechnology, Toshiba, Fuji Electric, Rohm, Renesas Electronics, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market segmentation

Semiconductor Discrete Devices market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for Consumption Value by Type and by Application. This analysis can help you expand your business by targeting qualified niche markets.

Market segmentation

Semiconductor Discrete Devices market is split by Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for Consumption Value by Type and by Application. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
Diodes
IGBT
MOSFET
BJT
Thyristor

Market segment by Application
Industrial Control
Automotive
Consumer Electronics
Communication
Grid and Energy
Others

Market segment by players, this report covers
Infineon
onsemi
STMicroelectronics
Mitsubishi Electric (Vincotech)
Nexperia
Vishay Intertechnology
Toshiba
Fuji Electric
Rohm
Renesas Electronics
Diodes Incorporated
Littelfuse (IXYS)
Alpha & Omega Semiconductor
Semikron Danfoss
Hitachi Power Semiconductor Device
Microchip
Sanken Electric
Semtech
MagnaChip
Bosch
Texas Instruments
KEC Corporation
Wolfspeed
PANJIT Group
Unisonic Technologies (UTC)
Niko Semiconductor
Hangzhou Silan Microelectronics
Yangzhou Yangjie Electronic Technology
China Resources Microelectronics Limited
Jilin Sino-Microelectronics
StarPower
NCEPOWER
Prisemi
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Zhuzhou CRRC Times Electric
WeEn Semiconductors
Changzhou Galaxy Century Microelectronics
MacMic Science & Technolog
BYD
Hubei TECH Semiconductors
BASiC Semiconductor
Shandong Jingdao Microelectronics
Sanan Optoelectronics
CETC-55
Shenzhen BASiC Semiconductor
Guangdong AccoPower
Qorvo (UnitedSiC)
GE Aerospace

Market segment by regions, regional analysis covers

North America (United States, Canada and Mexico)

Europe (Germany, France, UK, Russia, Italy and Rest of Europe)

Asia-Pacific (China, Japan, South Korea, India, Southeast Asia and Rest of Asia-Pacific)

South America (Brazil, Rest of South America)

Middle East & Africa (Turkey, Saudi Arabia, UAE, Rest of Middle East & Africa)

The content of the study subjects, includes a total of 13 chapters:

Chapter 1, to describe Semiconductor Discrete Devices product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top players of Semiconductor Discrete Devices, with revenue, gross margin, and global market share of Semiconductor Discrete Devices from 2019 to 2024.

Chapter 3, the Semiconductor Discrete Devices competitive situation, revenue, and global market share of top players are analyzed emphatically by landscape contrast.

Chapter 4 and 5, to segment the market size by Type and by Application, with consumption value and growth rate by Type, by Application, from 2019 to 2030.

Chapter 6, 7, 8, 9, and 10, to break the market size data at the country level, with revenue and market share for key countries in the world, from 2019 to 2024.and Semiconductor Discrete Devices market forecast, by regions, by Type and by Application, with consumption value, from 2024 to 2030.

Chapter 11, market dynamics, drivers, restraints, trends, Porters Five Forces analysis.

Chapter 12, the key raw materials and key suppliers, and industry chain of Semiconductor Discrete Devices.

Chapter 13, to describe Semiconductor Discrete Devices research findings and conclusion.