Global Schottky Rectifier Diode Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031

According to our (Global Info Research) latest study, the global Schottky Rectifier Diode market size was valued at US$ 1425 million in 2024 and is forecast to a readjusted size of USD 3243 million by 2031 with a CAGR of 13.3% during review period.

This report studies the Schottky Barrier Diodes (SBDs). A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, semiconductors in which metals are bonded to n-type layers have been commercialized. It is suitable for high-speed switching applications, because of small forward voltage and short reverse recovery time.

Schottky diode refers to an electronics part which is used at a boundless range for various applications such as power OR circuits, control rectifier, RF applications and others especially as a blender to identifier diode. The product is also known as several other names including Surface Barrier Diode, Hot Carrier Diode and Hot Electron Diode.

Currently, silicon-based Schottky diodes dominate in terms of market size, but silicon carbide (SiC) Schottky diodes are growing faster. Currently SiC schottky diodes are mainly used in Automotive & EV/HEV, EV Charging, Industrial Motor/Drive, PV, Energy Storage, Wind Power, UPS, Data Center & Server, etc.

Automotive is the largest market, hold a share over 65%, mainly used in OBC, DC/DC Converter, etc.

Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.

Currently the SiC schottky diodes market is dominated by few manufactuers, STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, San'an Optoelectronics, etc.

This report is a detailed and comprehensive analysis for global Schottky Rectifier Diode market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.

Key Features:

Global Schottky Rectifier Diode market size and forecasts, in consumption value ($ Million), sales quantity (Million Pieces), and average selling prices (US$/Piece), 2020-2031

Global Schottky Rectifier Diode market size and forecasts by region and country, in consumption value ($ Million), sales quantity (Million Pieces), and average selling prices (US$/Piece), 2020-2031

Global Schottky Rectifier Diode market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (Million Pieces), and average selling prices (US$/Piece), 2020-2031

Global Schottky Rectifier Diode market shares of main players, shipments in revenue ($ Million), sales quantity (Million Pieces), and ASP (US$/Piece), 2020-2025

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for Schottky Rectifier Diode

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global Schottky Rectifier Diode market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Vishay Intertechnology, Rohm, onsemi, Infineon, Nexperia (Wingtech), ST Microelectronics, Diodes Incorporated, PANJIT Group, Toshiba, Fuji Electric, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market Segmentation

Schottky Rectifier Diode market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
Si SBD
SiC SBD
Others

Market segment by Application
Automotive and Transportation
Energy and Power Grid
Consumer
Industrial Applications
Telecommunications
Avionics, Military and Medical
Others

Major players covered
Vishay Intertechnology
Rohm
onsemi
Infineon
Nexperia (Wingtech)
ST Microelectronics
Diodes Incorporated
PANJIT Group
Toshiba
Fuji Electric
Kyocera AVX
Microchip (Microsemi)
Sanken Electric
Texas Instruments
Shindengen
Unisonic Technologies (UTC)
Renesas Electronics
Hangzhou Silan Microelectronics
Yangzhou Yangjie Electronic Technology
China Resources Microelectronics Limited
Jilin Sino-Microelectronics
Hangzhou Li-On Microelectronics Corporation
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Changzhou Galaxy Century Microelectronics
Shandong Jingdao Microelectronics
Chongqing Pingwei Enterprise
Prisemi
Sanan IC
Navitas (GeneSiC)
Qorvo (UnitedSiC)
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Zhuzhou CRRC Times Electric
Cissoid

Market segment by region, regional analysis covers

North America (United States, Canada, and Mexico)

Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)

Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)

South America (Brazil, Argentina, Colombia, and Rest of South America)

Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe Schottky Rectifier Diode product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of Schottky Rectifier Diode, with price, sales quantity, revenue, and global market share of Schottky Rectifier Diode from 2020 to 2025.

Chapter 3, the Schottky Rectifier Diode competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the Schottky Rectifier Diode breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.

Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Schottky Rectifier Diode market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.

Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of Schottky Rectifier Diode.

Chapter 14 and 15, to describe Schottky Rectifier Diode sales channel, distributors, customers, research findings and conclusion.


1 Market Overview
2 Manufacturers Profiles
3 Competitive Environment: Schottky Rectifier Diode by Manufacturer
4 Consumption Analysis by Region
5 Market Segment by Type
6 Market Segment by Application
7 North America
8 Europe
9 Asia-Pacific
10 South America
11 Middle East & Africa
12 Market Dynamics
13 Raw Material and Industry Chain
14 Shipments by Distribution Channel
15 Research Findings and Conclusion
16 Appendix

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