Global Power GaN Substrate Wafer Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

Global Power GaN Substrate Wafer Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

The power GaN substrate wafer is designed to withstand the extreme stress of the GaN epitaxial process and reduce wafer bending and warping. GaN substrate wafers are grown using HVPE or MOCVD methods and can be used as an ideal and excellent substrate for high-frequency, high-speed, and high-power devices.

According to our (Global Info Research) latest study, the global Power GaN Substrate Wafer market size was valued at US$ million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of %during review period.

This report is a detailed and comprehensive analysis for global Power GaN Substrate Wafer market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2024, are provided.

Key Features:

Global Power GaN Substrate Wafer market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030

Global Power GaN Substrate Wafer market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030

Global Power GaN Substrate Wafer market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030

Global Power GaN Substrate Wafer market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2019-2024

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for Power GaN Substrate Wafer

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global Power GaN Substrate Wafer market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Mitsubishi Chemical Corporation, EpiGaN, Sumitomo, GLC Semiconductor Group, Okmetic, IGSS GaN, Homray Material Technology, POWDEC K.K., Nitride Semiconductors, Atecom Technology, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market Segmentation

Power GaN Substrate Wafer market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
Silicon Substrate
Sapphire Substrate
Silicon Carbide Substrate

Market segment by Application
CATV
5G Communications
Radars
Aerospace
Others

Major players covered
Mitsubishi Chemical Corporation
EpiGaN
Sumitomo
GLC Semiconductor Group
Okmetic
IGSS GaN
Homray Material Technology
POWDEC K.K.
Nitride Semiconductors
Atecom Technology
CorEnergy Semiconductor
Air Water
Ceramicforum
Zhonghuan Semiconductor
Xiamen Powerway Advanced Material
Dongguan Sino Crystal Semiconductor

Market segment by region, regional analysis covers

North America (United States, Canada, and Mexico)

Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)

Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)

South America (Brazil, Argentina, Colombia, and Rest of South America)

Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe Power GaN Substrate Wafer product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of Power GaN Substrate Wafer, with price, sales quantity, revenue, and global market share of Power GaN Substrate Wafer from 2019 to 2024.

Chapter 3, the Power GaN Substrate Wafer competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the Power GaN Substrate Wafer breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2019 to 2030.

Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2019 to 2030.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2019 to 2024.and Power GaN Substrate Wafer market forecast, by regions, by Type, and by Application, with sales and revenue, from 2025 to 2030.

Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of Power GaN Substrate Wafer.

Chapter 14 and 15, to describe Power GaN Substrate Wafer sales channel, distributors, customers, research findings and conclusion.