Global InGaAs PIN Photodiode Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030
A p–i–n photodiode, also called PIN photodiode, is a photodiode with an intrinsic (i) region in between the n- and p-doped regions. Most of the photons are absorbed in the intrinsic region, and carriers generated therein can efficiently contribute to the photocurrent.
According to our (Global Info Research) latest study, the global InGaAs PIN Photodiode market size was valued at US$ 133 million in 2023 and is forecast to a readjusted size of USD 181 million by 2030 with a CAGR of 4.5% during review period.
Main players in the global InGaAs PIN photodiode industry are Hamamatsu, OSI Optoelectronics and GCS. These 3 companies accounts for over a third of global market share in total. Geographically speaking, Asia-Pacific is the largest market, accounting for over 40% of total market share, followed by North America with over 25% market share. In terms of active area diameter, below 1mm segment and 1 mm segment accounts for over half of total market share. In terms of application, analytical instruments is the largest end user and covers over 35% of total market share.
This report is a detailed and comprehensive analysis for global InGaAs PIN Photodiode market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2024, are provided.
Key Features:
Global InGaAs PIN Photodiode market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030
Global InGaAs PIN Photodiode market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030
Global InGaAs PIN Photodiode market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030
Global InGaAs PIN Photodiode market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2019-2024
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for InGaAs PIN Photodiode
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global InGaAs PIN Photodiode market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Kyoto Semiconductor, Hamamatsu, First Sensor (TE), Excelitas, OSI Optoelectronics, GCS, Laser Components, Go!Foton, Ushio, Qphotonics, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
InGaAs PIN Photodiode market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Active Area Diameter Below 1mm
Active Area Diameter 1mm
Active Area Diameter 1.5mm
Active Area Diameter 2mm
Active Area Diameter 3mm
Others
Market segment by Application
Analytical Instruments
Communications
Measurement Equipment
Others
Major players covered
Kyoto Semiconductor
Hamamatsu
First Sensor (TE)
Excelitas
OSI Optoelectronics
GCS
Laser Components
Go!Foton
Ushio
Qphotonics
N.E.P.
Albis Optoelectronics
AC Photonics
Voxtel (Allegro MicroSystems)
Fermionics Opto-Technology
PHOGRAIN
Thorlabs
Shengshi Optical
CLPT
Optoway
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe InGaAs PIN Photodiode product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of InGaAs PIN Photodiode, with price, sales quantity, revenue, and global market share of InGaAs PIN Photodiode from 2019 to 2024.
Chapter 3, the InGaAs PIN Photodiode competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the InGaAs PIN Photodiode breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2019 to 2030.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2019 to 2030.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2019 to 2024.and InGaAs PIN Photodiode market forecast, by regions, by Type, and by Application, with sales and revenue, from 2025 to 2030.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of InGaAs PIN Photodiode.
Chapter 14 and 15, to describe InGaAs PIN Photodiode sales channel, distributors, customers, research findings and conclusion.