Global High Power GaN Devices Supply, Demand and Key Producers, 2023-2029

Global High Power GaN Devices Supply, Demand and Key Producers, 2023-2029

The global High Power GaN Devices market size is expected to reach $ million by 2029, rising at a market growth of % CAGR during the forecast period (2023-2029).

This report studies the global High Power GaN Devices production, demand, key manufacturers, and key regions.

This report is a detailed and comprehensive analysis of the world market for High Power GaN Devices, and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2022 as the base year. This report explores demand trends and competition, as well as details the characteristics of High Power GaN Devices that contribute to its increasing demand across many markets.

Highlights and key features of the study

Global High Power GaN Devices total production and demand, 2018-2029, (K Units)

Global High Power GaN Devices total production value, 2018-2029, (USD Million)

Global High Power GaN Devices production by region & country, production, value, CAGR, 2018-2029, (USD Million) & (K Units)

Global High Power GaN Devices consumption by region & country, CAGR, 2018-2029 & (K Units)

U.S. VS China: High Power GaN Devices domestic production, consumption, key domestic manufacturers and share

Global High Power GaN Devices production by manufacturer, production, price, value and market share 2018-2023, (USD Million) & (K Units)

Global High Power GaN Devices production by Type, production, value, CAGR, 2018-2029, (USD Million) & (K Units)

Global High Power GaN Devices production by Application production, value, CAGR, 2018-2029, (USD Million) & (K Units)

This reports profiles key players in the global High Power GaN Devices market based on the following parameters – company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, Texas Instruments, Integra Technologies, Qorvo, Wolfspeed, Efficient Power Conversion, GaN Systems, Nexperia and STMicroelectronics, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals, COVID-19 and Russia-Ukraine War Influence.

Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World High Power GaN Devices market

Detailed Segmentation:

Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (K Units) and average price (US$/Unit) by manufacturer, by Type, and by Application. Data is given for the years 2018-2029 by year with 2022 as the base year, 2023 as the estimate year, and 2024-2029 as the forecast year.

Global High Power GaN Devices Market, By Region:

United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World

Global High Power GaN Devices Market, Segmentation by Type

Transistors
Diodes

Global High Power GaN Devices Market, Segmentation by Application

Radar
Satellite
Base Station
Inverter
Power Switch
Others

Companies Profiled:
Infineon
Texas Instruments
Integra Technologies
Qorvo
Wolfspeed
Efficient Power Conversion
GaN Systems
Nexperia
STMicroelectronics
GOHM
Navitas
Power Integrations
Transphorm
Panasonic
GaNPower
Toshiba
Mitsubishi Electric

Key Questions Answered

1. How big is the global High Power GaN Devices market?

2. What is the demand of the global High Power GaN Devices market?

3. What is the year over year growth of the global High Power GaN Devices market?

4. What is the production and production value of the global High Power GaN Devices market?

5. Who are the key producers in the global High Power GaN Devices market?

6. What are the growth factors driving the market demand?