Global HV GaN HEMTs Supply, Demand and Key Producers, 2023-2029

Global HV GaN HEMTs Supply, Demand and Key Producers, 2023-2029

The global HV GaN HEMTs market size is expected to reach $ 331 million by 2029, rising at a market growth of 13.0% CAGR during the forecast period (2023-2029).

GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties over silicon devices, such as excellent high-frequency characteristics.

This report studies the global HV GaN HEMTs production, demand, key manufacturers, and key regions.

This report is a detailed and comprehensive analysis of the world market for HV GaN HEMTs, and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2022 as the base year. This report explores demand trends and competition, as well as details the characteristics of HV GaN HEMTs that contribute to its increasing demand across many markets.

Highlights and key features of the study

Global HV GaN HEMTs total production and demand, 2018-2029, (K Units)

Global HV GaN HEMTs total production value, 2018-2029, (USD Million)

Global HV GaN HEMTs production by region & country, production, value, CAGR, 2018-2029, (USD Million) & (K Units)

Global HV GaN HEMTs consumption by region & country, CAGR, 2018-2029 & (K Units)

U.S. VS China: HV GaN HEMTs domestic production, consumption, key domestic manufacturers and share

Global HV GaN HEMTs production by manufacturer, production, price, value and market share 2018-2023, (USD Million) & (K Units)

Global HV GaN HEMTs production by Type, production, value, CAGR, 2018-2029, (USD Million) & (K Units)

Global HV GaN HEMTs production by Application production, value, CAGR, 2018-2029, (USD Million) & (K Units).

This reports profiles key players in the global HV GaN HEMTs market based on the following parameters – company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon Technologies, Qorvo, ROHM, Toshiba, Innoscience, Sumitomo Electric Industries, STMicroelectronics, Wolfspeed and NXP Semiconductors, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals, COVID-19 and Russia-Ukraine War Influence.

Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World HV GaN HEMTs market.

Detailed Segmentation:

Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (K Units) and average price (US$/Units) by manufacturer, by Type, and by Application. Data is given for the years 2018-2029 by year with 2022 as the base year, 2023 as the estimate year, and 2024-2029 as the forecast year.

Global HV GaN HEMTs Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World

Global HV GaN HEMTs Market, Segmentation by Type
600V
650V
700V
Others (like 400V)

Global HV GaN HEMTs Market, Segmentation by Application
Consumer (Charger, Adapter)
Appliance Motor Drives
Industrial Power Supplies
Audio Amplifier
UPS, Telecom, Datacenter & Servers
Solar Inverter
Wireless Communication
Others

Companies Profiled:
Infineon Technologies
Qorvo
ROHM
Toshiba
Innoscience
Sumitomo Electric Industries
STMicroelectronics
Wolfspeed
NXP Semiconductors
MACOM
Transphorm
GaN Systems
Mitsubishi Electric Corp
GaNPower International
CETC 13
CETC 55
EPC
Ampleon
Teledyne Defense Electronics

Key Questions Answered

1. How big is the global HV GaN HEMTs market?

2. What is the demand of the global HV GaN HEMTs market?

3. What is the year over year growth of the global HV GaN HEMTs market?

4. What is the production and production value of the global HV GaN HEMTs market?

5. Who are the key producers in the global HV GaN HEMTs market?

6. What are the growth factors driving the market demand?