Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market 2024 by Company, Regions, Type and Application, Forecast to 2030

Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market 2024 by Company, Regions, Type and Application, Forecast to 2030

The power semiconductor is the core of electronic device electrical energy conversion and circuit control. In essence, it uses the unidirectional conductivity of the semiconductor to realize the function of power switch and power conversion. Whether it is hydropower, nuclear power, thermal power or wind power, or even the chemical energy provided by various batteries, most of them cannot be directly used. More than 75% of the electrical energy applications require power conversion by power semiconductor devices before they can be used by equipment.

According to our (Global Info Research) latest study, the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size was valued at US$ 1449 million in 2023 and is forecast to a readjusted size of USD 11400 million by 2030 with a CAGR of 34.7% during review period.

The major global manufacturers of gallium nitride and silicon carbide power semiconductors include Infineon, CREE (Wolfspeed), Roma Electronics, STMicroelectronics, ON Semiconductor, etc. Gallium nitride and silicon carbide power semiconductor manufacturers are mainly in Europe, America and Japan. Chinese manufacturers started late. Most domestic companies are in the early stage of research and development. The technology is relatively backward and the industry volume is small. There is a big gap with European, American and Japanese manufacturers.

This report is a detailed and comprehensive analysis for global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market. Both quantitative and qualitative analyses are presented by company, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2024, are provided.

Key Features:

Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size and forecasts, in consumption value ($ Million), 2019-2030

Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size and forecasts by region and country, in consumption value ($ Million), 2019-2030

Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size and forecasts, by Type and by Application, in consumption value ($ Million), 2019-2030

Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market shares of main players, in revenue ($ Million), 2019-2024

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market based on the following parameters - company overview, revenue, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, CREE (Wolfspeed), Roma Semiconductor Group, STMicroelectronics, ON Semiconductor, Mitsubishi Electric, Fuji Electric, Littelfuse, Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd., Shenzhen Basic Semiconductor Co., Ltd., etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market segmentation

Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for Consumption Value by Type and by Application. This analysis can help you expand your business by targeting qualified niche markets.

Market segmentation

Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market is split by Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for Consumption Value by Type and by Application. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
Silicon Carbide Power Semiconductor
Gallium Nitride Power Semiconductor

Market segment by Application
Consumer Electronics
New Energy Grid Connection
Rail
Industrial Motor
Ups Power Supply
New Energy Vehicles
Other

Market segment by players, this report covers
Infineon
CREE (Wolfspeed)
Roma Semiconductor Group
STMicroelectronics
ON Semiconductor
Mitsubishi Electric
Fuji Electric
Littelfuse
Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd.
Shenzhen Basic Semiconductor Co., Ltd.

Market segment by regions, regional analysis covers

North America (United States, Canada and Mexico)

Europe (Germany, France, UK, Russia, Italy and Rest of Europe)

Asia-Pacific (China, Japan, South Korea, India, Southeast Asia and Rest of Asia-Pacific)

South America (Brazil, Rest of South America)

Middle East & Africa (Turkey, Saudi Arabia, UAE, Rest of Middle East & Africa)

The content of the study subjects, includes a total of 13 chapters:

Chapter 1, to describe Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top players of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors, with revenue, gross margin, and global market share of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors from 2019 to 2024.

Chapter 3, the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors competitive situation, revenue, and global market share of top players are analyzed emphatically by landscape contrast.

Chapter 4 and 5, to segment the market size by Type and by Application, with consumption value and growth rate by Type, by Application, from 2019 to 2030.

Chapter 6, 7, 8, 9, and 10, to break the market size data at the country level, with revenue and market share for key countries in the world, from 2019 to 2024.and Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market forecast, by regions, by Type and by Application, with consumption value, from 2024 to 2030.

Chapter 11, market dynamics, drivers, restraints, trends, Porters Five Forces analysis.

Chapter 12, the key raw materials and key suppliers, and industry chain of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors.

Chapter 13, to describe Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors research findings and conclusion.