Global GaN on Si HEMT Epitaxial Wafer Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

Global GaN on Si HEMT Epitaxial Wafer Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

According to our (Global Info Research) latest study, the global GaN on Si HEMT Epitaxial Wafer market size was valued at USD 54 million in 2022 and is forecast to a readjusted size of USD 205 million by 2029 with a CAGR of 21.1% during review period.

Due to the use of Si substrate materials, GaN can be epitaxially grown on large-diameter silicon wafers and has the advantages of being compatible with traditional Si processes, making it an ideal choice for the development of power semiconductor technology. There are two types of GaN on Si HEMT epitaxy: normally-on, depletion-type (D-type) and normally-off, enhancement-type (E-type).

The main feature of GaN on Si is that Si is the substrate and GaN is the epitaxy. Silicon substrates are cheap, low in cost, can be produced on a large scale, have high energy density, and the size of the wafer can be made very large. Currently, the size of the wafer is 8 inches, but it is mainly 6 inches.

The Global Info Research report includes an overview of the development of the GaN on Si HEMT Epitaxial Wafer industry chain, the market status of GaN RF Devices (4 Inch, 6 Inch), GaN Power Devices (4 Inch, 6 Inch), and key enterprises in developed and developing market, and analysed the cutting-edge technology, patent, hot applications and market trends of GaN on Si HEMT Epitaxial Wafer.

Regionally, the report analyzes the GaN on Si HEMT Epitaxial Wafer markets in key regions. North America and Europe are experiencing steady growth, driven by government initiatives and increasing consumer awareness. Asia-Pacific, particularly China, leads the global GaN on Si HEMT Epitaxial Wafer market, with robust domestic demand, supportive policies, and a strong manufacturing base.

Key Features:

The report presents comprehensive understanding of the GaN on Si HEMT Epitaxial Wafer market. It provides a holistic view of the industry, as well as detailed insights into individual components and stakeholders. The report analysis market dynamics, trends, challenges, and opportunities within the GaN on Si HEMT Epitaxial Wafer industry.

The report involves analyzing the market at a macro level:

Market Sizing and Segmentation: Report collect data on the overall market size, including the sales quantity (Pcs), revenue generated, and market share of different by Type (e.g., 4 Inch, 6 Inch).

Industry Analysis: Report analyse the broader industry trends, such as government policies and regulations, technological advancements, consumer preferences, and market dynamics. This analysis helps in understanding the key drivers and challenges influencing the GaN on Si HEMT Epitaxial Wafer market.

Regional Analysis: The report involves examining the GaN on Si HEMT Epitaxial Wafer market at a regional or national level. Report analyses regional factors such as government incentives, infrastructure development, economic conditions, and consumer behaviour to identify variations and opportunities within different markets.

Market Projections: Report covers the gathered data and analysis to make future projections and forecasts for the GaN on Si HEMT Epitaxial Wafer market. This may include estimating market growth rates, predicting market demand, and identifying emerging trends.

The report also involves a more granular approach to GaN on Si HEMT Epitaxial Wafer:

Company Analysis: Report covers individual GaN on Si HEMT Epitaxial Wafer manufacturers, suppliers, and other relevant industry players. This analysis includes studying their financial performance, market positioning, product portfolios, partnerships, and strategies.

Consumer Analysis: Report covers data on consumer behaviour, preferences, and attitudes towards GaN on Si HEMT Epitaxial Wafer This may involve surveys, interviews, and analysis of consumer reviews and feedback from different by Application (GaN RF Devices, GaN Power Devices).

Technology Analysis: Report covers specific technologies relevant to GaN on Si HEMT Epitaxial Wafer. It assesses the current state, advancements, and potential future developments in GaN on Si HEMT Epitaxial Wafer areas.

Competitive Landscape: By analyzing individual companies, suppliers, and consumers, the report present insights into the competitive landscape of the GaN on Si HEMT Epitaxial Wafer market. This analysis helps understand market share, competitive advantages, and potential areas for differentiation among industry players.

Market Validation: The report involves validating findings and projections through primary research, such as surveys, interviews, and focus groups.

Market Segmentation

GaN on Si HEMT Epitaxial Wafer market is split by Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.

Market segment by Type
4 Inch
6 Inch
Others

Market segment by Application
GaN RF Devices
GaN Power Devices

Major players covered
IQE
DOWA Electronics
CETC13
CETC55
Soitec (EpiGaN)
NTT-AT
BTOZ
Episil-Precision Inc
Epistar Corp
Enkris Semiconductor Inc
Innoscience
Runxin Microelectronics
CorEnergy
Qingdao Cohenius Microelectronics
Shaanxi Yuteng Electronic Technology

Market segment by region, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe GaN on Si HEMT Epitaxial Wafer product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of GaN on Si HEMT Epitaxial Wafer, with price, sales, revenue and global market share of GaN on Si HEMT Epitaxial Wafer from 2018 to 2023.

Chapter 3, the GaN on Si HEMT Epitaxial Wafer competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the GaN on Si HEMT Epitaxial Wafer breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2018 to 2029.

Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2018 to 2029.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2017 to 2022.and GaN on Si HEMT Epitaxial Wafer market forecast, by regions, type and application, with sales and revenue, from 2024 to 2029.

Chapter 12, market dynamics, drivers, restraints, trends, Porters Five Forces analysis, and Influence of COVID-19 and Russia-Ukraine War.

Chapter 13, the key raw materials and key suppliers, and industry chain of GaN on Si HEMT Epitaxial Wafer.

Chapter 14 and 15, to describe GaN on Si HEMT Epitaxial Wafer sales channel, distributors, customers, research findings and conclusion.