Global GaN Semiconductor Devices Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

Global GaN Semiconductor Devices Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

According to our (Global Info Research) latest study, the global GaN Semiconductor Devices market size was valued at US$ 1318 million in 2023 and is forecast to a readjusted size of USD 5441 million by 2030 with a CAGR of 22.7% during review period.

Global key players of GaN semiconductor devices include Toshiba, Wolfspeed, GaN Systems, Infineon Technologies, etc. Global top five manufacturers hold a share over 88%. North America is the largest producer of GaN semiconductor devices holds a share over 45%. In terms of product, GaN RF devices is the largest segment, with a share over 82%. And in terms of application, the largest application is consumer electronics, with a share over 63%.

This report is a detailed and comprehensive analysis for global GaN Semiconductor Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2024, are provided.

Key Features:

Global GaN Semiconductor Devices market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030

Global GaN Semiconductor Devices market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030

Global GaN Semiconductor Devices market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2019-2030

Global GaN Semiconductor Devices market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2019-2024

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for GaN Semiconductor Devices

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global GaN Semiconductor Devices market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Toshiba, Wolfspeed, GaN Systems, Infineon Technologies, Efficient Power Conversion (EPC), Mitsubishi Electric, STMicroelectronics, Transphorm, NexGen, ROHM Semiconductor, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market Segmentation

GaN Semiconductor Devices market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
GaN Power Devices (Schottky Diodes, Field Effect Transistors (FETs))
GaN RF Devices (Power Amplifier PA, Low Noise Amplifier LNA, RF Switch SWITCH, Monolithic Integrated Circuit MMIC)

Market segment by Application
Consumer Electronics
Telecom & Datacom
Industrial Industry
Defence & Aerospace
Energy Industry
Automobile & Mobility
Others

Major players covered
Toshiba
Wolfspeed
GaN Systems
Infineon Technologies
Efficient Power Conversion (EPC)
Mitsubishi Electric
STMicroelectronics
Transphorm
NexGen
ROHM Semiconductor
Sumitomo Electric Device Innovations Inc (SEDI)
Qorvo
MACOM
Renesas Electronics
Dynax Semiconductor
Jiangsu Corenergy Semiconductor
Ampleon
Innoscience
NXP Semiconductors

Market segment by region, regional analysis covers

North America (United States, Canada, and Mexico)

Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)

Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)

South America (Brazil, Argentina, Colombia, and Rest of South America)

Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe GaN Semiconductor Devices product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of GaN Semiconductor Devices, with price, sales quantity, revenue, and global market share of GaN Semiconductor Devices from 2019 to 2024.

Chapter 3, the GaN Semiconductor Devices competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the GaN Semiconductor Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2019 to 2030.

Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2019 to 2030.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2019 to 2024.and GaN Semiconductor Devices market forecast, by regions, by Type, and by Application, with sales and revenue, from 2025 to 2030.

Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of GaN Semiconductor Devices.

Chapter 14 and 15, to describe GaN Semiconductor Devices sales channel, distributors, customers, research findings and conclusion.