Global GaN MOSFET Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030
According to our (Global Info Research) latest study, the global GaN MOSFET market size was valued at USD million in 2023 and is forecast to a readjusted size of USD million by 2030 with a CAGR of % during review period.
Gallium nitride (GaN) is a very hard, mechanically stable wide bandgap semiconductor. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices.
The Global Info Research report includes an overview of the development of the GaN MOSFET industry chain, the market status of Consumer Electronics (100V, 400V), Automotive (100V, 400V), and key enterprises in developed and developing market, and analysed the cutting-edge technology, patent, hot applications and market trends of GaN MOSFET.
Regionally, the report analyzes the GaN MOSFET markets in key regions. North America and Europe are experiencing steady growth, driven by government initiatives and increasing consumer awareness. Asia-Pacific, particularly China, leads the global GaN MOSFET market, with robust domestic demand, supportive policies, and a strong manufacturing base.
Key Features:
The report presents comprehensive understanding of the GaN MOSFET market. It provides a holistic view of the industry, as well as detailed insights into individual components and stakeholders. The report analysis market dynamics, trends, challenges, and opportunities within the GaN MOSFET industry.
The report involves analyzing the market at a macro level:
Market Sizing and Segmentation: Report collect data on the overall market size, including the sales quantity (K Units), revenue generated, and market share of different by Type (e.g., 100V, 400V).
Industry Analysis: Report analyse the broader industry trends, such as government policies and regulations, technological advancements, consumer preferences, and market dynamics. This analysis helps in understanding the key drivers and challenges influencing the GaN MOSFET market.
Regional Analysis: The report involves examining the GaN MOSFET market at a regional or national level. Report analyses regional factors such as government incentives, infrastructure development, economic conditions, and consumer behaviour to identify variations and opportunities within different markets.
Market Projections: Report covers the gathered data and analysis to make future projections and forecasts for the GaN MOSFET market. This may include estimating market growth rates, predicting market demand, and identifying emerging trends.
The report also involves a more granular approach to GaN MOSFET:
Company Analysis: Report covers individual GaN MOSFET manufacturers, suppliers, and other relevant industry players. This analysis includes studying their financial performance, market positioning, product portfolios, partnerships, and strategies.
Consumer Analysis: Report covers data on consumer behaviour, preferences, and attitudes towards GaN MOSFET This may involve surveys, interviews, and analysis of consumer reviews and feedback from different by Application (Consumer Electronics, Automotive).
Technology Analysis: Report covers specific technologies relevant to GaN MOSFET. It assesses the current state, advancements, and potential future developments in GaN MOSFET areas.
Competitive Landscape: By analyzing individual companies, suppliers, and consumers, the report present insights into the competitive landscape of the GaN MOSFET market. This analysis helps understand market share, competitive advantages, and potential areas for differentiation among industry players.
Market Validation: The report involves validating findings and projections through primary research, such as surveys, interviews, and focus groups.
Market Segmentation
GaN MOSFET market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.
Market segment by Type
100V
400V
600V
650V
Market segment by Application
Consumer Electronics
Automotive
Medical Industry
Others
Major players covered
Nexperia
GaN Systems
Infineon Technologies
STMicroelectronics
TI
Renesas
ON Semiconductor
Fujitsu
Market segment by region, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe GaN MOSFET product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of GaN MOSFET, with price, sales, revenue and global market share of GaN MOSFET from 2019 to 2024.
Chapter 3, the GaN MOSFET competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the GaN MOSFET breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2019 to 2030.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2019 to 2030.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2017 to 2023.and GaN MOSFET market forecast, by regions, type and application, with sales and revenue, from 2025 to 2030.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of GaN MOSFET.
Chapter 14 and 15, to describe GaN MOSFET sales channel, distributors, customers, research findings and conclusion.