Global GaN HEMT Epitaxial Wafer Supply, Demand and Key Producers, 2023-2029

Global GaN HEMT Epitaxial Wafer Supply, Demand and Key Producers, 2023-2029

The global GaN HEMT Epitaxial Wafer market size is expected to reach $ 600.5 million by 2029, rising at a market growth of 18.7% CAGR during the forecast period (2023-2029).

Global 5 largest manufacturers of GaN HEMT Epitaxial Wafer are Wolfspeed, Inc, Sumitomo Chemical (SCIOCS), CETC 13, IQE and NTT-AT, which make up over 60%. Among them, Wolfspeed, Inc is the leader with about 19% market share.

North America is the largest market, with a share about 40%, followed by Europe and Asia-Pacific, with the share about 21% and 34%. In terms of product type, GaN-on-SiC occupies the largest share of the total market, about 66%. And in terms of application, the largest application is GaN HEMT RF Devices, followed by GaN HEMT Power Devices.

GaN HEMT epitaxial wafer is a multilayer film grown epitaxially on a substrate, which usually includes a nucleation layer, a transition layer, a buffer layer, a channel layer, a barrier layer, a cap layer, and a passivation layer from bottom to top. Using gallium nitride (GaN) HEMT epiwafer brings various benefits for the next generation high frequency and high power devices. At the device level, GaN devices exceed limitations of the conventional Si devices. GaN devices can achieve very high-power efficiency, which accordingly reduces their size and lower power consumption, consequently that of their final products.

This report studies the global GaN HEMT Epitaxial Wafer production, demand, key manufacturers, and key regions.

This report is a detailed and comprehensive analysis of the world market for GaN HEMT Epitaxial Wafer, and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2022 as the base year. This report explores demand trends and competition, as well as details the characteristics of GaN HEMT Epitaxial Wafer that contribute to its increasing demand across many markets.

Highlights and key features of the study

Global GaN HEMT Epitaxial Wafer total production and demand, 2018-2029, (Pcs)

Global GaN HEMT Epitaxial Wafer total production value, 2018-2029, (USD Million)

Global GaN HEMT Epitaxial Wafer production by region & country, production, value, CAGR, 2018-2029, (USD Million) & (Pcs)

Global GaN HEMT Epitaxial Wafer consumption by region & country, CAGR, 2018-2029 & (Pcs)

U.S. VS China: GaN HEMT Epitaxial Wafer domestic production, consumption, key domestic manufacturers and share

Global GaN HEMT Epitaxial Wafer production by manufacturer, production, price, value and market share 2018-2023, (USD Million) & (Pcs)

Global GaN HEMT Epitaxial Wafer production by Substrate Type, production, value, CAGR, 2018-2029, (USD Million) & (Pcs)

Global GaN HEMT Epitaxial Wafer production by Application production, value, CAGR, 2018-2029, (USD Million) & (Pcs).

This reports profiles key players in the global GaN HEMT Epitaxial Wafer market based on the following parameters – company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Wolfspeed, Inc, IQE, Soitec (EpiGaN), Transphorm Inc., Sumitomo Chemical (SCIOCS), NTT Advanced Technology (NTT-AT), DOWA Electronics Materials, BTOZ and Episil-Precision Inc, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals, COVID-19 and Russia-Ukraine War Influence.

Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World GaN HEMT Epitaxial Wafer market.

Detailed Segmentation:

Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (Pcs) and average price (USD/Pcs) by manufacturer, by Substrate Type, and by Application. Data is given for the years 2018-2029 by year with 2022 as the base year, 2023 as the estimate year, and 2024-2029 as the forecast year.

Global GaN HEMT Epitaxial Wafer Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World

Global GaN HEMT Epitaxial Wafer Market, Segmentation by Substrate Type
GaN-on-SiC
GaN-on-Si
GaN-on-Sapphire
GaN on GaN Others

Global GaN HEMT Epitaxial Wafer Market, Segmentation by Application
GaN HEMT RF Devices
GaN HEMT Power Devices

Companies Profiled:
Wolfspeed, Inc
IQE
Soitec (EpiGaN)
Transphorm Inc.
Sumitomo Chemical (SCIOCS)
NTT Advanced Technology (NTT-AT)
DOWA Electronics Materials
BTOZ
Episil-Precision Inc
Epistar Corp.
CETC 13
CETC 55
Enkris Semiconductor Inc
Innoscience
Runxin Microelectronics
CorEnergy
Suzhou Nanowin Science and Technology
Qingdao Cohenius Microelectronics
Shaanxi Yuteng Electronic Technology
Dynax Semiconductor
Sanan Optoelectronics

Key Questions Answered

1. How big is the global GaN HEMT Epitaxial Wafer market?

2. What is the demand of the global GaN HEMT Epitaxial Wafer market?

3. What is the year over year growth of the global GaN HEMT Epitaxial Wafer market?

4. What is the production and production value of the global GaN HEMT Epitaxial Wafer market?

5. Who are the key producers in the global GaN HEMT Epitaxial Wafer market?

6. What are the growth factors driving the market demand?