Global GaN HEMT Epitaxial Wafer Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

Global GaN HEMT Epitaxial Wafer Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

According to our (Global Info Research) latest study, the global GaN HEMT Epitaxial Wafer market size was valued at USD 181 million in 2022 and is forecast to a readjusted size of USD 600.5 million by 2029 with a CAGR of 18.7% during review period.

GaN HEMT epitaxial wafer is a multilayer film grown epitaxially on a substrate, which usually includes a nucleation layer, a transition layer, a buffer layer, a channel layer, a barrier layer, a cap layer, and a passivation layer from bottom to top. Using gallium nitride (GaN) HEMT epiwafer brings various benefits for the next generation high frequency and high power devices. At the device level, GaN devices exceed limitations of the conventional Si devices. GaN devices can achieve very high-power efficiency, which accordingly reduces their size and lower power consumption, consequently that of their final products.

Global 5 largest manufacturers of GaN HEMT Epitaxial Wafer are Wolfspeed, Inc, Sumitomo Chemical (SCIOCS), CETC 13, IQE and NTT-AT, which make up over 60%. Among them, Wolfspeed, Inc is the leader with about 19% market share.

North America is the largest market, with a share about 40%, followed by Europe and Asia-Pacific, with the share about 21% and 34%. In terms of product type, GaN-on-SiC occupies the largest share of the total market, about 66%. And in terms of application, the largest application is GaN HEMT RF Devices, followed by GaN HEMT Power Devices.

The Global Info Research report includes an overview of the development of the GaN HEMT Epitaxial Wafer industry chain, the market status of GaN HEMT RF Devices (GaN-on-SiC, GaN-on-Si), GaN HEMT Power Devices (GaN-on-SiC, GaN-on-Si), and key enterprises in developed and developing market, and analysed the cutting-edge technology, patent, hot applications and market trends of GaN HEMT Epitaxial Wafer.

Regionally, the report analyzes the GaN HEMT Epitaxial Wafer markets in key regions. North America and Europe are experiencing steady growth, driven by government initiatives and increasing consumer awareness. Asia-Pacific, particularly China, leads the global GaN HEMT Epitaxial Wafer market, with robust domestic demand, supportive policies, and a strong manufacturing base.

Key Features:

The report presents comprehensive understanding of the GaN HEMT Epitaxial Wafer market. It provides a holistic view of the industry, as well as detailed insights into individual components and stakeholders. The report analysis market dynamics, trends, challenges, and opportunities within the GaN HEMT Epitaxial Wafer industry.

The report involves analyzing the market at a macro level:

Market Sizing and Segmentation: Report collect data on the overall market size, including the sales quantity (Pcs), revenue generated, and market share of different by Substrate Type (e.g., GaN-on-SiC, GaN-on-Si).

Industry Analysis: Report analyse the broader industry trends, such as government policies and regulations, technological advancements, consumer preferences, and market dynamics. This analysis helps in understanding the key drivers and challenges influencing the GaN HEMT Epitaxial Wafer market.

Regional Analysis: The report involves examining the GaN HEMT Epitaxial Wafer market at a regional or national level. Report analyses regional factors such as government incentives, infrastructure development, economic conditions, and consumer behaviour to identify variations and opportunities within different markets.

Market Projections: Report covers the gathered data and analysis to make future projections and forecasts for the GaN HEMT Epitaxial Wafer market. This may include estimating market growth rates, predicting market demand, and identifying emerging trends.

The report also involves a more granular approach to GaN HEMT Epitaxial Wafer:

Company Analysis: Report covers individual GaN HEMT Epitaxial Wafer manufacturers, suppliers, and other relevant industry players. This analysis includes studying their financial performance, market positioning, product portfolios, partnerships, and strategies.

Consumer Analysis: Report covers data on consumer behaviour, preferences, and attitudes towards GaN HEMT Epitaxial Wafer This may involve surveys, interviews, and analysis of consumer reviews and feedback from different by Application (GaN HEMT RF Devices, GaN HEMT Power Devices).

Technology Analysis: Report covers specific technologies relevant to GaN HEMT Epitaxial Wafer. It assesses the current state, advancements, and potential future developments in GaN HEMT Epitaxial Wafer areas.

Competitive Landscape: By analyzing individual companies, suppliers, and consumers, the report present insights into the competitive landscape of the GaN HEMT Epitaxial Wafer market. This analysis helps understand market share, competitive advantages, and potential areas for differentiation among industry players.

Market Validation: The report involves validating findings and projections through primary research, such as surveys, interviews, and focus groups.

Market Segmentation

GaN HEMT Epitaxial Wafer market is split by Substrate Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for consumption value by Substrate Type, and by Application in terms of volume and value.

Market segment by Substrate Type
GaN-on-SiC
GaN-on-Si
GaN-on-Sapphire
GaN on GaN Others

Market segment by Application
GaN HEMT RF Devices
GaN HEMT Power Devices

Major players covered
Wolfspeed, Inc
IQE
Soitec (EpiGaN)
Transphorm Inc.
Sumitomo Chemical (SCIOCS)
NTT Advanced Technology (NTT-AT)
DOWA Electronics Materials
BTOZ
Episil-Precision Inc
Epistar Corp.
CETC 13
CETC 55
Enkris Semiconductor Inc
Innoscience
Runxin Microelectronics
CorEnergy
Suzhou Nanowin Science and Technology
Qingdao Cohenius Microelectronics
Shaanxi Yuteng Electronic Technology
Dynax Semiconductor
Sanan Optoelectronics

Market segment by region, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe GaN HEMT Epitaxial Wafer product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of GaN HEMT Epitaxial Wafer, with price, sales, revenue and global market share of GaN HEMT Epitaxial Wafer from 2018 to 2023.

Chapter 3, the GaN HEMT Epitaxial Wafer competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the GaN HEMT Epitaxial Wafer breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2018 to 2029.

Chapter 5 and 6, to segment the sales by Substrate Type and application, with sales market share and growth rate by substrate type, application, from 2018 to 2029.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2017 to 2022.and GaN HEMT Epitaxial Wafer market forecast, by regions, substrate type and application, with sales and revenue, from 2024 to 2029.

Chapter 12, market dynamics, drivers, restraints, trends, Porters Five Forces analysis, and Influence of COVID-19 and Russia-Ukraine War.

Chapter 13, the key raw materials and key suppliers, and industry chain of GaN HEMT Epitaxial Wafer.

Chapter 14 and 15, to describe GaN HEMT Epitaxial Wafer sales channel, distributors, customers, research findings and conclusion.