Global GaN and AIN Materials Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031

According to our (Global Info Research) latest study, the global GaN and AIN Materials market size was valued at US$ 321 million in 2024 and is forecast to a readjusted size of USD 537 million by 2031 with a CAGR of 7.7% during review period.

Gallium nitride (GaN) is an inorganic compound and a wide bandgap semiconductor material with a bandgap width of 3.4 electron volts (eV). Gallium nitride has excellent physical and chemical properties, such as high melting point, high hardness, high chemical stability, and good thermal conductivity and electrical conductivity. In semiconductor devices, gallium nitride can be used to manufacture high-efficiency, high-power microelectronic and optoelectronic devices.

Aluminum nitride (AIN) is a high-performance ceramic material with high thermal conductivity, high strength, high hardness, good chemical stability and electrical insulation. The crystal structure of aluminum nitride is hexagonal wurtzite type, with excellent thermal, mechanical and electrical properties.

Global key players of GaN and AIN Materials include Sumitomo Electric Industries, Ltd., Sumitomo Chemical, Mitsubishi Chemical, Kyma Technologies, HexaTech, etc. The top five players hold a share over 89%. Asia-Pacific is the largest market, has a share about 27%, followed by North America and Europe, with share 27% and 23%, separately. In terms of product type, Single Crystal GaN Substrate is the largest segment, occupied for a share of 95%, and in terms of application, RF Device has a share about 49 percent.

Market drivers

Technological progress and industrial upgrading:

With the continuous optimization of the preparation process and the reduction of costs, the performance of aluminum nitride materials has been continuously improved, and the application fields have been continuously expanded. For example, in the semiconductor industry, aluminum nitride, as a packaging substrate material, can effectively reduce the thermal resistance of the chip when it is working, and improve the reliability and life of the device; in high-frequency power devices, the high thermal conductivity and low thermal expansion coefficient of aluminum nitride make it an ideal heat dissipation material.

At the same time, aluminum nitride also has important applications in LED substrate materials, laser diode heat dissipation and other fields. With the rapid development of these fields, the demand for aluminum nitride materials continues to grow.

Market demand growth:

In the field of electronic components, aluminum nitride is widely used in optical devices and piezoelectric devices. For example, aluminum nitride substrates can be used as heat dissipation bases for optical devices to improve the stability and service life of optical devices; aluminum nitride piezoelectric devices have the characteristics of high sensitivity, low loss, and high temperature resistance, and have broad application prospects in aerospace, precision instruments and other fields.

In addition, in terms of industrial materials, the high hardness and wear resistance of aluminum nitride make it an ideal material for grinding and cutting tools; in the field of acoustic devices, aluminum nitride ultrasonic transducers have the advantages of high power, high efficiency, and small size, and are widely used in medical, industrial testing and other fields.

Policy support and industrial planning:

Governments of various countries have continuously increased their support for the new materials industry, providing a good policy environment for the research and development and production of aluminum nitride materials. For example, China regards the new materials industry as one of the national strategic emerging industries, and has introduced a series of policy measures to encourage enterprises to increase R&D investment and promote industrial upgrading and transformation.

At the same time, with the increasing demand for high-performance and high-reliability materials worldwide, the market demand for aluminum nitride materials has also shown a rapid growth trend.

In summary, gallium nitride and aluminum nitride materials have shown huge market potential and development prospects in their respective application fields. With the continuous advancement of technology and the continuous expansion of the market, the application fields of these two materials will be further expanded, providing strong support for the development of related industries.

This report is a detailed and comprehensive analysis for global GaN and AIN Materials market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.

Key Features:

Global GaN and AIN Materials market size and forecasts, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pc), 2020-2031

Global GaN and AIN Materials market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pc), 2020-2031

Global GaN and AIN Materials market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pc), 2020-2031

Global GaN and AIN Materials market shares of main players, shipments in revenue ($ Million), sales quantity (K Pcs), and ASP (US$/Pc), 2020-2025

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for GaN and AIN Materials

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global GaN and AIN Materials market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Sumitomo Electric Industries, Ltd., Sumitomo Chemical, Mitsubishi Chemical, Kyma Technologies, HexaTech, Sino NitrideSemiconductor, Suzhou Nanowin Science and Technology Co.,Ltd, Ultratrend Technologies Co., Ltd., etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market Segmentation

GaN and AIN Materials market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
Single Crystal GaN Substrate
Single Crystal AIN Substrate

Market segment by Application
RF Device
Power Electronics
MicroLED
UV LED
High Brightness LED
GaN Laser

Major players covered
Sumitomo Electric Industries, Ltd.
Sumitomo Chemical
Mitsubishi Chemical
Kyma Technologies
HexaTech
Sino NitrideSemiconductor
Suzhou Nanowin Science and Technology Co.,Ltd
Ultratrend Technologies Co., Ltd.

Market segment by region, regional analysis covers

North America (United States, Canada, and Mexico)

Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)

Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)

South America (Brazil, Argentina, Colombia, and Rest of South America)

Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe GaN and AIN Materials product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of GaN and AIN Materials, with price, sales quantity, revenue, and global market share of GaN and AIN Materials from 2020 to 2025.

Chapter 3, the GaN and AIN Materials competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the GaN and AIN Materials breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.

Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and GaN and AIN Materials market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.

Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of GaN and AIN Materials.

Chapter 14 and 15, to describe GaN and AIN Materials sales channel, distributors, customers, research findings and conclusion.