Global Epitaxial Growth Equipment for SiC and GaN Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031

According to our (Global Info Research) latest study, the global Epitaxial Growth Equipment for SiC and GaN market size was valued at US$ 1096 million in 2024 and is forecast to a readjusted size of USD 1815 million by 2031 with a CAGR of 7.1% during review period.

Epitaxial growth or epitaxy refers to the deposition of a crystalline covering layer (epitaxial layer) on a crystalline substrate. Epitaxy is used to manufacture silicon ingots and deposit a suitable crystalline layer on the surface of the wafer. Epitaxy can be divided into homogeneous epitaxy and heterogeneous epitaxy. In order to meet the specific requirements of devices for parameters such as resistance in different application fields, the device can only be made after epitaxy that meets the conditions is carried out on the substrate. Therefore, the quality of epitaxy will affect the performance of the device. Second-generation and third-generation semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) widely require epitaxy technology as support.

Epitaxial Growth Equipment for SiC and GaN plays an important role in semiconductor manufacturing through epitaxial growth technology. It can provide high-quality and highly controlled epitaxial layers for the manufacture of various semiconductor devices and functional materials.

The market for Epitaxial Growth Equipment used in silicon carbide (SiC) and gallium nitride (GaN) semiconductors is rapidly evolving, driven by demand across a variety of advanced applications. These include power devices, microLEDs, and laser diodes, which require precision epitaxial growth to meet performance standards. GaN materials dominate the epitaxy market after silicon substrates, particularly for traditional GaN-based LEDs. Meanwhile, SiC substrates are gaining traction in the power electronics sector due to their wide bandgap properties, offering high efficiency and robustness for high-voltage applications. Although SiC substrates remain costly, they are considered critical for cutting-edge MOSFET and diode technologies, reinforcing their role in shaping the epitaxy equipment market.

Globally, China leads the market for epitaxial growth equipment for SiC and GaN, accounting for approximately 40% of the total share. This dominance stems from China’s substantial investments in semiconductor manufacturing and a focus on developing domestic supply chains for critical materials and equipment.

Key players in this space include NuFlare Technology Inc., Tokyo Electron Limited, NAURA, and VEECO, collectively holding about 60% of the market share. These companies are at the forefront of innovation, providing advanced solutions to meet the increasing complexity and precision requirements of semiconductor applications. Competition in this market is fierce, driven by the high capital intensity and technological expertise required for equipment manufacturing.

Chemical Vapor Deposition (CVD) epitaxy equipment is the largest product segment, representing around 50% of the market. This popularity can be attributed to its versatility and ability to achieve high-quality epitaxial layers crucial for advanced semiconductor devices. In terms of application, SiC epitaxy accounts for approximately 60% of the market. SiC-based solutions are particularly favored in power electronics for their superior performance in high-voltage and high-temperature environments, making them indispensable for applications in electric vehicles, renewable energy, and industrial power systems. GaN epitaxy also remains a significant segment, driven by its widespread adoption in optoelectronic devices and emerging roles in RF and 5G technologies.

This report is a detailed and comprehensive analysis for global Epitaxial Growth Equipment for SiC and GaN market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.

Key Features:

Global Epitaxial Growth Equipment for SiC and GaN market size and forecasts, in consumption value ($ Million), sales quantity (Units), and average selling prices (K US$/Unit), 2020-2031

Global Epitaxial Growth Equipment for SiC and GaN market size and forecasts by region and country, in consumption value ($ Million), sales quantity (Units), and average selling prices (K US$/Unit), 2020-2031

Global Epitaxial Growth Equipment for SiC and GaN market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (Units), and average selling prices (K US$/Unit), 2020-2031

Global Epitaxial Growth Equipment for SiC and GaN market shares of main players, shipments in revenue ($ Million), sales quantity (Units), and ASP (K US$/Unit), 2020-2025

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for Epitaxial Growth Equipment for SiC and GaN

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global Epitaxial Growth Equipment for SiC and GaN market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include NuFlare Technology Inc., Tokyo Electron Limited, NAURA, VEECO, Taiyo Nippon Sanso, Aixtron, Advanced Micro-Fabrication Equipment Inc. China (AMEC）, ASM International, Aixtron, Riber, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market Segmentation

Epitaxial Growth Equipment for SiC and GaN market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
CVD
MOCVD
Others

Market segment by Application
SiC Epitaxy
GaN Epitaxy

Major players covered
NuFlare Technology Inc.
Tokyo Electron Limited
NAURA
VEECO
Taiyo Nippon Sanso
Aixtron
Advanced Micro-Fabrication Equipment Inc. China (AMEC）
ASM International
Aixtron
Riber
CETC
Tang Optoelectronics Equipment
Technology Engine of Science
HERMES Epitek

Market segment by region, regional analysis covers

North America (United States, Canada, and Mexico)

Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)

Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)

South America (Brazil, Argentina, Colombia, and Rest of South America)

Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe Epitaxial Growth Equipment for SiC and GaN product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of Epitaxial Growth Equipment for SiC and GaN, with price, sales quantity, revenue, and global market share of Epitaxial Growth Equipment for SiC and GaN from 2020 to 2025.

Chapter 3, the Epitaxial Growth Equipment for SiC and GaN competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the Epitaxial Growth Equipment for SiC and GaN breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.

Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Epitaxial Growth Equipment for SiC and GaN market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.

Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of Epitaxial Growth Equipment for SiC and GaN.

Chapter 14 and 15, to describe Epitaxial Growth Equipment for SiC and GaN sales channel, distributors, customers, research findings and conclusion.