Global Epitaxial Growth Equipment for SiC and GaN Supply, Demand and Key Producers, 2023-2029

Global Epitaxial Growth Equipment for SiC and GaN Supply, Demand and Key Producers, 2023-2029

The global Epitaxial Growth Equipment for SiC and GaN market size is expected to reach $ 1522.8 million by 2029, rising at a market growth of 6.9% CAGR during the forecast period (2023-2029).

Global key players of Epitaxial Growth Equipment for SiC and GaN include NuFlare Technology Inc., Tokyo Electron Limited, NAURA and VEECO, etc. The top four players hold a share about 60%. China is the largest market, has a share about 40%. In terms of product type, CVD is the largest segment, occupied for a share of about 50%, and in terms of application, SiC Epitaxy has a share about 60 percent.

Epitaxial growth is used today for siliconbased devices as well as in the III-V compound semiconductor industry. This demand is expected to increase and strongly driven by microLEDs, power devices and laser diode applications.

In terms of semiconductor substrate, GaN material represents the major epitaxy market after silicon substrates, mostly driven by the traditional LED GaN-devices.

On the other hand, wide band gap materials like SiC substrates have found opportunities in the power electronics market. Despite the high market price of SiC, such substrates are a strong asset for high-voltage applications, and thus are considered as a technology choice for some MOSFET and diode products.

The Global Epitaxial Growth Equipment for SiC and GaN market comprises a wide range of products suitable for use within the Global domestic market. In order to quantify and analyse the market, our definition of the market includes the following key product sectors:

This report specifically excludes labour and measures the product values at manufacturers selling prices. value-added tax, import duties and transportation fees are excluded as well as labour other delivery charges. Whilst we have made every effort to exclude commercial applications, there may be some light commercial applications included within the overall market sizes quoted.

Where volume figures are illustrated for the overall market, these are provided as number of sales. The geographical coverage for this report is the Global and includes domestically manufactured and imported products.

This report studies the global Epitaxial Growth Equipment for SiC and GaN production, demand, key manufacturers, and key regions.

This report is a detailed and comprehensive analysis of the world market for Epitaxial Growth Equipment for SiC and GaN, and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2022 as the base year. This report explores demand trends and competition, as well as details the characteristics of Epitaxial Growth Equipment for SiC and GaN that contribute to its increasing demand across many markets.

Highlights and key features of the study

Global Epitaxial Growth Equipment for SiC and GaN total production and demand, 2018-2029, (Units)

Global Epitaxial Growth Equipment for SiC and GaN total production value, 2018-2029, (USD Million)

Global Epitaxial Growth Equipment for SiC and GaN production by region & country, production, value, CAGR, 2018-2029, (USD Million) & (Units)

Global Epitaxial Growth Equipment for SiC and GaN consumption by region & country, CAGR, 2018-2029 & (Units)

U.S. VS China: Epitaxial Growth Equipment for SiC and GaN domestic production, consumption, key domestic manufacturers and share

Global Epitaxial Growth Equipment for SiC and GaN production by manufacturer, production, price, value and market share 2018-2023, (USD Million) & (Units)

Global Epitaxial Growth Equipment for SiC and GaN production by Type, production, value, CAGR, 2018-2029, (USD Million) & (Units)

Global Epitaxial Growth Equipment for SiC and GaN production by Application production, value, CAGR, 2018-2029, (USD Million) & (Units).

This reports profiles key players in the global Epitaxial Growth Equipment for SiC and GaN market based on the following parameters – company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include NuFlare Technology Inc., Tokyo Electron Limited, NAURA, VEECO, Taiyo Nippon Sanso, Aixtron, Advanced Micro-Fabrication Equipment Inc. China (AMEC） and ASM International, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World Epitaxial Growth Equipment for SiC and GaN market.

Detailed Segmentation:

Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (Units) and average price (USD/Unit) by manufacturer, by Type, and by Application. Data is given for the years 2018-2029 by year with 2022 as the base year, 2023 as the estimate year, and 2024-2029 as the forecast year.

Global Epitaxial Growth Equipment for SiC and GaN Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World

Global Epitaxial Growth Equipment for SiC and GaN Market, Segmentation by Type
CVD
MOCVD
Others

Global Epitaxial Growth Equipment for SiC and GaN Market, Segmentation by Application
SiC Epitaxy
GaN Epitaxy

Companies Profiled:
NuFlare Technology Inc.
Tokyo Electron Limited
NAURA
VEECO
Taiyo Nippon Sanso
Aixtron
Advanced Micro-Fabrication Equipment Inc. China (AMEC）
ASM International

Key Questions Answered

1. How big is the global Epitaxial Growth Equipment for SiC and GaN market?

2. What is the demand of the global Epitaxial Growth Equipment for SiC and GaN market?

3. What is the year over year growth of the global Epitaxial Growth Equipment for SiC and GaN market?

4. What is the production and production value of the global Epitaxial Growth Equipment for SiC and GaN market?

5. Who are the key producers in the global Epitaxial Growth Equipment for SiC and GaN market?