Global Epitaxial Growth Equipment for SiC and GaN Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

Global Epitaxial Growth Equipment for SiC and GaN Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

According to our (Global Info Research) latest study, the global Epitaxial Growth Equipment for SiC and GaN market size was valued at USD 954 million in 2022 and is forecast to a readjusted size of USD 1522.8 million by 2029 with a CAGR of 6.9% during review period.

Epitaxial growth is used today for siliconbased devices as well as in the III-V compound semiconductor industry. This demand is expected to increase and strongly driven by microLEDs, power devices and laser diode applications.

In terms of semiconductor substrate, GaN material represents the major epitaxy market after silicon substrates, mostly driven by the traditional LED GaN-devices.

On the other hand, wide band gap materials like SiC substrates have found opportunities in the power electronics market. Despite the high market price of SiC, such substrates are a strong asset for high-voltage applications, and thus are considered as a technology choice for some MOSFET and diode products.

The Global Epitaxial Growth Equipment for SiC and GaN market comprises a wide range of products suitable for use within the Global domestic market. In order to quantify and analyse the market, our definition of the market includes the following key product sectors:

This report specifically excludes labour and measures the product values at manufacturers selling prices. value-added tax, import duties and transportation fees are excluded as well as labour other delivery charges. Whilst we have made every effort to exclude commercial applications, there may be some light commercial applications included within the overall market sizes quoted.

Where volume figures are illustrated for the overall market, these are provided as number of sales. The geographical coverage for this report is the Global and includes domestically manufactured and imported products.

Global key players of Epitaxial Growth Equipment for SiC and GaN include NuFlare Technology Inc., Tokyo Electron Limited, NAURA and VEECO, etc. The top four players hold a share about 60%. China is the largest market, has a share about 40%. In terms of product type, CVD is the largest segment, occupied for a share of about 50%, and in terms of application, SiC Epitaxy has a share about 60 percent.

The Global Info Research report includes an overview of the development of the Epitaxial Growth Equipment for SiC and GaN industry chain, the market status of SiC Epitaxy (CVD, MOCVD), GaN Epitaxy (CVD, MOCVD), and key enterprises in developed and developing market, and analysed the cutting-edge technology, patent, hot applications and market trends of Epitaxial Growth Equipment for SiC and GaN.

Regionally, the report analyzes the Epitaxial Growth Equipment for SiC and GaN markets in key regions. North America and Europe are experiencing steady growth, driven by government initiatives and increasing consumer awareness. Asia-Pacific, particularly China, leads the global Epitaxial Growth Equipment for SiC and GaN market, with robust domestic demand, supportive policies, and a strong manufacturing base.

Key Features:

The report presents comprehensive understanding of the Epitaxial Growth Equipment for SiC and GaN market. It provides a holistic view of the industry, as well as detailed insights into individual components and stakeholders. The report analysis market dynamics, trends, challenges, and opportunities within the Epitaxial Growth Equipment for SiC and GaN industry.

The report involves analyzing the market at a macro level:

Market Sizing and Segmentation: Report collect data on the overall market size, including the sales quantity (Units), revenue generated, and market share of different by Type (e.g., CVD, MOCVD).

Industry Analysis: Report analyse the broader industry trends, such as government policies and regulations, technological advancements, consumer preferences, and market dynamics. This analysis helps in understanding the key drivers and challenges influencing the Epitaxial Growth Equipment for SiC and GaN market.

Regional Analysis: The report involves examining the Epitaxial Growth Equipment for SiC and GaN market at a regional or national level. Report analyses regional factors such as government incentives, infrastructure development, economic conditions, and consumer behaviour to identify variations and opportunities within different markets.

Market Projections: Report covers the gathered data and analysis to make future projections and forecasts for the Epitaxial Growth Equipment for SiC and GaN market. This may include estimating market growth rates, predicting market demand, and identifying emerging trends.

The report also involves a more granular approach to Epitaxial Growth Equipment for SiC and GaN:

Company Analysis: Report covers individual Epitaxial Growth Equipment for SiC and GaN manufacturers, suppliers, and other relevant industry players. This analysis includes studying their financial performance, market positioning, product portfolios, partnerships, and strategies.

Consumer Analysis: Report covers data on consumer behaviour, preferences, and attitudes towards Epitaxial Growth Equipment for SiC and GaN This may involve surveys, interviews, and analysis of consumer reviews and feedback from different by Application (SiC Epitaxy, GaN Epitaxy).

Technology Analysis: Report covers specific technologies relevant to Epitaxial Growth Equipment for SiC and GaN. It assesses the current state, advancements, and potential future developments in Epitaxial Growth Equipment for SiC and GaN areas.

Competitive Landscape: By analyzing individual companies, suppliers, and consumers, the report present insights into the competitive landscape of the Epitaxial Growth Equipment for SiC and GaN market. This analysis helps understand market share, competitive advantages, and potential areas for differentiation among industry players.

Market Validation: The report involves validating findings and projections through primary research, such as surveys, interviews, and focus groups.

Market Segmentation

Epitaxial Growth Equipment for SiC and GaN market is split by Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.

Market segment by Type
CVD
MOCVD
Others

Market segment by Application
SiC Epitaxy
GaN Epitaxy

Major players covered
NuFlare Technology Inc.
Tokyo Electron Limited
NAURA
VEECO
Taiyo Nippon Sanso
Aixtron
Advanced Micro-Fabrication Equipment Inc. China (AMEC）
ASM International

Market segment by region, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe Epitaxial Growth Equipment for SiC and GaN product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of Epitaxial Growth Equipment for SiC and GaN, with price, sales, revenue and global market share of Epitaxial Growth Equipment for SiC and GaN from 2018 to 2023.

Chapter 3, the Epitaxial Growth Equipment for SiC and GaN competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the Epitaxial Growth Equipment for SiC and GaN breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2018 to 2029.

Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2018 to 2029.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2017 to 2022.and Epitaxial Growth Equipment for SiC and GaN market forecast, by regions, type and application, with sales and revenue, from 2024 to 2029.

Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of Epitaxial Growth Equipment for SiC and GaN.

Chapter 14 and 15, to describe Epitaxial Growth Equipment for SiC and GaN sales channel, distributors, customers, research findings and conclusion.