Global Avalanche Photo Diode Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

Global Avalanche Photo Diode Market 2024 by Manufacturers, Regions, Type and Application, Forecast to 2030

The Avalanche Photo Diode industry can be broken down into several segments, Si-APD, InGaAs-APD, Others, etc.

Across the world, the major players cover First-sensor, Hamamatsu, Kyosemi Corporation, Luna, Excelitas, Osi optoelectronics, Edmund Optics, GCS, Accelink, NORINCO GROUP, etc.

Avalanche Photo Diode (APD) is a highly sensitive semiconductor electronic device that exploits the photoelectric effect to convert light to electricity. APDs can be thought of as photodetectors that provide a built-in first stage of gain through avalanche multiplication. From a functional standpoint, they can be regarded as the semiconductor analog to photomultipliers. By applying a high reverse bias voltage, APDs show an internal current gain effect due to impact ionization. However, some silicon APDs employ alternative doping and beveling techniques compared to traditional APDs that allow greater voltage to be applied before breakdown is reached and hence a greater operating gain. In general, the higher the reverse voltage, the higher the gain.

Avalanche Photo Diode (APD) applicability and usefulness depends on many parameters. Two of the larger factors are: quantum efficiency, which indicates how well incident optical photons are absorbed and then used to generate primary charge carriers; and total leakage current, which is the sum of the dark current and photocurrent and noise. Electronic dark noise components are series and parallel noise. Series noise, which is the effect of shot noise, is basically proportional to the APD capacitance while the parallel noise is associated with the fluctuations of the APD bulk and surface dark currents. Another noise source is the excess noise factor, ENF. It describes the statistical noise that is inherent with the stochastic APD multiplication process. This is not to be confused with the fano noise (F), which describes the fluctuation of the total electric charge collected in the APD.

According to our (Global Info Research) latest study, the global Avalanche Photo Diode market size was valued at US$ 150 million in 2023 and is forecast to a readjusted size of USD 248 million by 2030 with a CAGR of 7.5% during review period.

First-sensor and Hamamatsu are the biggest two players in Avalanche Photo Diode market. Other enterprises including Kyosemi, Excelitas, Osi optoelectronics, GCS, Accelink, and NORINCO GROUP, etc. First-sensor and Hamamatsu are the biggest two players in Avalanche Photo Diode market, with about 20% and 16% market share (revenue) separately in 2019.

Production Locations of these leading brands mainly distributed in Japan, USA, and European.

There are two types of avalanche photo diode, one is Si-APD, the other is InGaAs-APD.

As for application, avalanche photo diode can be used in industrial, medical and mobility. Industry accounted for about 44% of the market share in 2019.

This report is a detailed and comprehensive analysis for global Avalanche Photo Diode market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2024, are provided.

Key Features:

Global Avalanche Photo Diode market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (USD/Unit), 2019-2030

Global Avalanche Photo Diode market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (USD/Unit), 2019-2030

Global Avalanche Photo Diode market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (USD/Unit), 2019-2030

Global Avalanche Photo Diode market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (USD/Unit), 2019-2024

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for Avalanche Photo Diode

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global Avalanche Photo Diode market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include First-sensor, Hamamatsu, Kyosemi Corporation, Excelitas, Osi optoelectronics, GCS, Accelink, NORINCO GROUP, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market Segmentation

Avalanche Photo Diode market is split by Type and by Application. For the period 2019-2030, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
Si-APD
InGaAs-APD
Others

Market segment by Application
Industrial
Medical
Mobility
Others

Major players covered
First-sensor
Hamamatsu
Kyosemi Corporation
Excelitas
Osi optoelectronics
GCS
Accelink
NORINCO GROUP

Market segment by region, regional analysis covers

North America (United States, Canada, and Mexico)

Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)

Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)

South America (Brazil, Argentina, Colombia, and Rest of South America)

Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe Avalanche Photo Diode product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of Avalanche Photo Diode, with price, sales quantity, revenue, and global market share of Avalanche Photo Diode from 2019 to 2024.

Chapter 3, the Avalanche Photo Diode competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the Avalanche Photo Diode breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2019 to 2030.

Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2019 to 2030.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2019 to 2024.and Avalanche Photo Diode market forecast, by regions, by Type, and by Application, with sales and revenue, from 2025 to 2030.

Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of Avalanche Photo Diode.

Chapter 14 and 15, to describe Avalanche Photo Diode sales channel, distributors, customers, research findings and conclusion.