Global Automotive-grade SiC Devices (Discrete) Supply, Demand and Key Producers, 2023-2029

Global Automotive-grade SiC Devices (Discrete) Supply, Demand and Key Producers, 2023-2029

The global Automotive-grade SiC Devices (Discrete) market size is expected to reach $ 680.4 million by 2029, rising at a market growth of 28.7% CAGR during the forecast period (2023-2029).

The key players of SiC MOSFET modules are STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc. The top three players hold a share over 70 percent. The key players of SiC MOSFET Discrete are STMicroelectronics, Infineon, Wolfspeed, Rohm, and CETC 55, etc. The top five players hold a share over 80 percent. The key players of SiC SBD are STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip (Microsemi), and San'an Optoelectronics, etc. The top five players hold a share over 70 percent.

This report studies the Automotive-grade SiC Devices (Discrete), key segments cover SiC MOSFET discrete, SiC Schottky Barrier Diodes discrete, SiC FETs, SiC JFETs etc., used in EV Main Inverter (Electric Traction), OBC and DC/DC.

This report studies the global Automotive-grade SiC Devices (Discrete) production, demand, key manufacturers, and key regions.

This report is a detailed and comprehensive analysis of the world market for Automotive-grade SiC Devices (Discrete), and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2022 as the base year. This report explores demand trends and competition, as well as details the characteristics of Automotive-grade SiC Devices (Discrete) that contribute to its increasing demand across many markets.

Highlights and key features of the study

Global Automotive-grade SiC Devices (Discrete) total production and demand, 2018-2029, (K Units)

Global Automotive-grade SiC Devices (Discrete) total production value, 2018-2029, (USD Million)

Global Automotive-grade SiC Devices (Discrete) production by region & country, production, value, CAGR, 2018-2029, (USD Million) & (K Units)

Global Automotive-grade SiC Devices (Discrete) consumption by region & country, CAGR, 2018-2029 & (K Units)

U.S. VS China: Automotive-grade SiC Devices (Discrete) domestic production, consumption, key domestic manufacturers and share

Global Automotive-grade SiC Devices (Discrete) production by manufacturer, production, price, value and market share 2018-2023, (USD Million) & (K Units)

Global Automotive-grade SiC Devices (Discrete) production by Type, production, value, CAGR, 2018-2029, (USD Million) & (K Units)

Global Automotive-grade SiC Devices (Discrete) production by Application production, value, CAGR, 2018-2029, (USD Million) & (K Units).

This reports profiles key players in the global Automotive-grade SiC Devices (Discrete) market based on the following parameters – company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World Automotive-grade SiC Devices (Discrete) market.

Detailed Segmentation:

Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (K Units) and average price (US$/Unit) by manufacturer, by Type, and by Application. Data is given for the years 2018-2029 by year with 2022 as the base year, 2023 as the estimate year, and 2024-2029 as the forecast year.

Global Automotive-grade SiC Devices (Discrete) Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World

Global Automotive-grade SiC Devices (Discrete) Market, Segmentation by Type
SiC MOSFET Discrete
SiC Diode Discrete (SiC SBD)
Others (SiC JFETs & FETs)

Global Automotive-grade SiC Devices (Discrete) Market, Segmentation by Application
Main Inverter (Electric Traction)
OBC
DC/DC Converter for EV/HEV

Companies Profiled:
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
BYD Semiconductor
Microchip (Microsemi)
Mitsubishi Electric (Vincotech)
Semikron Danfoss
Navitas (GeneSiC)
Toshiba
San'an Optoelectronics
CETC 55
BASiC Semiconductor
Bosch
Zhuzhou CRRC Times Electric
Guangdong AccoPower Semiconductor

Key Questions Answered

1. How big is the global Automotive-grade SiC Devices (Discrete) market?

2. What is the demand of the global Automotive-grade SiC Devices (Discrete) market?

3. What is the year over year growth of the global Automotive-grade SiC Devices (Discrete) market?

4. What is the production and production value of the global Automotive-grade SiC Devices (Discrete) market?

5. Who are the key producers in the global Automotive-grade SiC Devices (Discrete) market?