Global Automotive-grade SiC Devices (Discrete) Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

Global Automotive-grade SiC Devices (Discrete) Market 2023 by Manufacturers, Regions, Type and Application, Forecast to 2029

According to our (Global Info Research) latest study, the global Automotive-grade SiC Devices (Discrete) market size was valued at USD 116.3 million in 2022 and is forecast to a readjusted size of USD 680.4 million by 2029 with a CAGR of 28.7% during review period.

This report studies the Automotive-grade SiC Devices (Discrete), key segments cover SiC MOSFET discrete, SiC Schottky Barrier Diodes discrete, SiC FETs, SiC JFETs etc., used in EV Main Inverter (Electric Traction), OBC and DC/DC.

The key players of SiC MOSFET modules are STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc. The top three players hold a share over 70 percent. The key players of SiC MOSFET Discrete are STMicroelectronics, Infineon, Wolfspeed, Rohm, and CETC 55, etc. The top five players hold a share over 80 percent. The key players of SiC SBD are STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip (Microsemi), and San'an Optoelectronics, etc. The top five players hold a share over 70 percent.

The Global Info Research report includes an overview of the development of the Automotive-grade SiC Devices (Discrete) industry chain, the market status of Main Inverter (Electric Traction) (SiC MOSFET Discrete, SiC Diode Discrete (SiC SBD)), OBC (SiC MOSFET Discrete, SiC Diode Discrete (SiC SBD)), and key enterprises in developed and developing market, and analysed the cutting-edge technology, patent, hot applications and market trends of Automotive-grade SiC Devices (Discrete).

Regionally, the report analyzes the Automotive-grade SiC Devices (Discrete) markets in key regions. North America and Europe are experiencing steady growth, driven by government initiatives and increasing consumer awareness. Asia-Pacific, particularly China, leads the global Automotive-grade SiC Devices (Discrete) market, with robust domestic demand, supportive policies, and a strong manufacturing base.

Key Features:

The report presents comprehensive understanding of the Automotive-grade SiC Devices (Discrete) market. It provides a holistic view of the industry, as well as detailed insights into individual components and stakeholders. The report analysis market dynamics, trends, challenges, and opportunities within the Automotive-grade SiC Devices (Discrete) industry.

The report involves analyzing the market at a macro level:

Market Sizing and Segmentation: Report collect data on the overall market size, including the sales quantity (K Units), revenue generated, and market share of different by Type (e.g., SiC MOSFET Discrete, SiC Diode Discrete (SiC SBD)).

Industry Analysis: Report analyse the broader industry trends, such as government policies and regulations, technological advancements, consumer preferences, and market dynamics. This analysis helps in understanding the key drivers and challenges influencing the Automotive-grade SiC Devices (Discrete) market.

Regional Analysis: The report involves examining the Automotive-grade SiC Devices (Discrete) market at a regional or national level. Report analyses regional factors such as government incentives, infrastructure development, economic conditions, and consumer behaviour to identify variations and opportunities within different markets.

Market Projections: Report covers the gathered data and analysis to make future projections and forecasts for the Automotive-grade SiC Devices (Discrete) market. This may include estimating market growth rates, predicting market demand, and identifying emerging trends.

The report also involves a more granular approach to Automotive-grade SiC Devices (Discrete):

Company Analysis: Report covers individual Automotive-grade SiC Devices (Discrete) manufacturers, suppliers, and other relevant industry players. This analysis includes studying their financial performance, market positioning, product portfolios, partnerships, and strategies.

Consumer Analysis: Report covers data on consumer behaviour, preferences, and attitudes towards Automotive-grade SiC Devices (Discrete) This may involve surveys, interviews, and analysis of consumer reviews and feedback from different by Application (Main Inverter (Electric Traction), OBC).

Technology Analysis: Report covers specific technologies relevant to Automotive-grade SiC Devices (Discrete). It assesses the current state, advancements, and potential future developments in Automotive-grade SiC Devices (Discrete) areas.

Competitive Landscape: By analyzing individual companies, suppliers, and consumers, the report present insights into the competitive landscape of the Automotive-grade SiC Devices (Discrete) market. This analysis helps understand market share, competitive advantages, and potential areas for differentiation among industry players.

Market Validation: The report involves validating findings and projections through primary research, such as surveys, interviews, and focus groups.

Market Segmentation

Automotive-grade SiC Devices (Discrete) market is split by Type and by Application. For the period 2018-2029, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value.

Market segment by Type
SiC MOSFET Discrete
SiC Diode Discrete (SiC SBD)
Others (SiC JFETs & FETs)

Market segment by Application
Main Inverter (Electric Traction)
OBC
DC/DC Converter for EV/HEV

Major players covered
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
BYD Semiconductor
Microchip (Microsemi)
Mitsubishi Electric (Vincotech)
Semikron Danfoss
Navitas (GeneSiC)
Toshiba
San'an Optoelectronics
CETC 55
BASiC Semiconductor
Bosch
Zhuzhou CRRC Times Electric
Guangdong AccoPower Semiconductor

Market segment by region, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe Automotive-grade SiC Devices (Discrete) product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of Automotive-grade SiC Devices (Discrete), with price, sales, revenue and global market share of Automotive-grade SiC Devices (Discrete) from 2018 to 2023.

Chapter 3, the Automotive-grade SiC Devices (Discrete) competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the Automotive-grade SiC Devices (Discrete) breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2018 to 2029.

Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2018 to 2029.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2017 to 2022.and Automotive-grade SiC Devices (Discrete) market forecast, by regions, type and application, with sales and revenue, from 2024 to 2029.

Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of Automotive-grade SiC Devices (Discrete).

Chapter 14 and 15, to describe Automotive-grade SiC Devices (Discrete) sales channel, distributors, customers, research findings and conclusion.