Global IGBT and Super Junction MOSFET Market to Reach $18.9 Billion by 2030
The global market for IGBT and Super Junction MOSFET estimated at US$9.5 Billion in the year 2023, is expected to reach US$18.9 Billion by 2030, growing at a CAGR of 10.3% over the period 2023-2030. Insulated Gate Bipolar Transistor (IGBT), one of the segments analyzed in the report, is expected to record 10.4% CAGR and reach US$17.1 Billion by the end of the analysis period. Growth in the Super junction MOSFET segment is estimated at 9.3% CAGR for the next 7-year period.
The U.S. Market is Estimated at $3 Billion, While China is Forecast to Grow at 9.5% CAGR
The IGBT and Super Junction MOSFET market in the U.S. is estimated at US$3 Billion in the year 2023. China, the world`s second largest economy, is forecast to reach a projected market size of US$3.2 Billion by the year 2030 trailing a CAGR of 9.5% over the analysis period 2023 to 2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at 9.6% and 8.3% respectively over the 2023-2030 period. Within Europe, Germany is forecast to grow at approximately 8.3% CAGR.
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