Gallium Nitride (GaN) Devices Market Size, Share, Growth and Global Industry Analysis By Type & Application, Regional Insights and Forecast to 2024-2032
Growth Factors of Gallium Nitride (Gan) Device Market
The Gallium nitride (GaN) device market size was valued at USD 20.56 billion in 2019. The market is projected to grow from USD 21.18 billion in 2020 to USD 39.74 billion in 2032, exhibiting a CAGR of 5.20% during the forecast period of 2020-2027.
The COVID-19 pandemic had a horrific impact at the Gallium Nitride (GaN) device marketplace due to disruptions in worldwide supply chains, production slowdowns, and decreased investments in research and improvement. The closure of factories and the dearth of raw substances delayed manufacturing and distribution of GaN-primarily based devices, which are utilized in sectors like telecommunications, automotive, and customer electronics. Additionally, the financial uncertainty delivered approximately businesses to reduce on big infrastructure duties, affecting call for GaN technologies. However, as economies get higher and industries shift towards electricity-green answers, the marketplace is anticipated to rebound, riding lengthy-term increase.
One modern fashion within the Gallium Nitride (GaN) tool market is the developing adoption of GaN generation in electric powered motors (EVs) and renewable power systems. GaN gadgets are extraordinarily green, supplying quicker switching speeds and decreased electricity losses compared to conventional silicon-based totally semiconductors. This makes them ideal for energy electronics in EVs, which consist of onboard chargers and inverters, similarly to for sun inverters and wind energy systems. As the decision for sustainable and strength-green solutions will increase, GaN's feature inside the car and renewable power sectors is expanding, riding the increase of the market.
A key using thing behind the increase of the Gallium Nitride (GaN) device marketplace is the increasing call for electricity-efficient and excessive-overall performance strength electronics. GaN semiconductors offer advanced efficiency, faster switching speeds, and decreased energy losses compared to conventional silicon-primarily based gadgets. These advantages make GaN ideal for use in numerous programs, consisting of electric vehicles, renewable energy structures, telecommunications, and customer electronics. As industries flow in the direction of sustainable answers and attempt to reduce power intake, the call for GaN-based totally devices is rising. This trend is similarly supported through the developing want for miniaturization and better electricity density in digital devices.
Comprehensive Analysis of Gallium nitride (GaN) device market
The Gallium nitride (GaN) device market growth is rising at an exponential rate due to its marketplace segmentation. This market expansion correctly affords a detailed local assessments thinking about the dominant supply and call for forces that effect the enterprise. These segmentations are methodically segregated by device type include opto-semiconductor device, power semiconductor device, and RF semiconductor device, by wafer size include 2-inch wafer, 4-inch wafer, and 6-inch and above wafer, by component include transistor, diode, rectifier, power IC, and other, by application include light detection & ranging, wireless and EV charging, radar and satellite radio frequency, and others.
The North America location lead the Gallium nitride (GaN) device market share percentage via benefitting a marketplace size of USD 7.38 billion due to the presence of major players.
The top players in the market play a crucial role in the industry assuring market growth and setting market standards. These players include, Cree, Inc., efficient power conversion corporation, epistar corporation, macom.
January 2021: Yaskawa Electric Corporation, a Japanese strength electronics company, partnered with Transphorm, a California-based GaN power conversion company. Through this collaboration, Yaskawa will integrate Transphorm’s Gallium Nitride (GaN) strength devices into its industrial strength conversion answers, consisting of variable frequency drives and servo vehicles, improving typical performance and strength efficiency
Segmentation Table
ATTRIBUTE DETAILS
Study Period 2016-2027
Base Year 2019
Forecast Period 2020-2027
Historical Period 2016-2018
Unit Value (USD billion)
Segmentation By Device Type
Opto-Semiconductor Device
Power Semiconductor Device
RF Semiconductor Device
By Wafer Size
2-Inch Wafer
4-Inch Wafer
6-Inch and Above Wafer
By Component
Transistor
Diode
Rectifier
Power IC
Other
By Application
Light Detection & Ranging
Wireless and EV Charging
Radar and Satellite Radio Frequency
Others
By End User
Aerospace
Defense
Healthcare
Renewables
Information and Communication Technology
Others
By Geography
North America (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)
The U.S. (By Device Type)
Canada (By Device Type)
Europe (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)
The U.K. (By Device Type)
Germany (By Device Type)
France (By Device Type)
Russia (By Device Type)
Italy (By Device Type)
Rest of Europe (By Device Type)
Asia-Pacific (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)
China (By Device Type)
India (By Device Type)
Japan (By Device Type)
Australia (By Device Type)
South Korea (By Device Type)
Rest of AsiaPacific (By Device Type)
Middle East (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)
Saudi Arabia (By Device Type)
Israel (By Device Type)
Turkey (By Device Type)
Rest of the Middle East (By Device Type)
Rest of the World (By Device Type, By Wafer Size, By Component, By Application, By End User, and By Country)
Africa (By Device Type)
Latin America (By Device Type)