Global SiC Power Devices Competitive Landscape Professional Research Report 2024
Research Summary
Silicon Carbide (SiC) power devices are a type of semiconductor device that leverage silicon carbide as their semiconductor material, offering notable advantages over traditional silicon-based devices. SiC power devices are capable of operating at higher temperatures, voltages, and frequencies, with reduced switching losses and increased power density. This allows for more efficient power conversion and management in various applications such as electric vehicles, renewable energy systems, and industrial power electronics. SiC power devices are increasingly recognized for their potential to significantly enhance energy efficiency, reliability, and performance across a wide range of power electronics applications.
According to DIResearch's in-depth investigation and research, the global SiC Power Devices market size will reach XX US$ Million in 2024, and is expected to reach XX US$ Million in 2030, with a CAGR of XX% (2025-2030). Among them, the China market has changed rapidly in the past few years. The market size in 2024 will be XX US$ Million, accounting for approximately XX% of the world. It is expected to reach XX US$ Million in 2030, and the global share will reach XX%.
The major global manufacturers of SiC Power Devices include ROHM Semiconductor, Infineon, Mitsubishi Electric Corp, STMicroelectronics N.V., Toshiba Corp, Fuji Electric Co Ltd, Infineon Technologies, ON Semiconductor Corp etc. The global players competition landscape in this report is divided into three tiers. The first tiers is the global leading enterprise, which occupies a major market share, is in a leading position in the industry, has strong competitiveness and influence, and has a large revenue scale; the second tiers has a certain share and popularity in the market, actively follows the industry leaders in product, service or technological innovation, and has a medium revenue scale; the third tiers has a smaller share in the market, has a lower brand awareness, mainly focuses on the local market, and has a relatively small revenue scale.
This report studies the market size, price trends and future development prospects of SiC Power Devices. Focus on analysing the market share, product portfolio, prices, sales volume, revenue and gross profit margin of global major manufacturers, as well as the market status and trends of different product types and applications in the global SiC Power Devices market. The report data covers historical data from 2019 to 2023, based year in 2024 and forecast data from 2025 to 2030.
The regions and countries in the report include North America, Europe, China, APAC (excl. China), Latin America and Middle East and Africa, covering the SiC Power Devices market conditions and future development trends of key regions and countries, combined with industry-related policies and the latest technological developments, analyze the development characteristics of SiC Power Devices industries in various regions and countries, help companies understand the development characteristics of each region, help companies formulate business strategies, and achieve the ultimate goal of the company's global development strategy.
The data sources of this report mainly include the National Bureau of Statistics, customs databases, industry associations, corporate financial reports, third-party databases, etc. Among them, macroeconomic data mainly comes from the National Bureau of Statistics, International Economic Research Organization; industry statistical data mainly come from industry associations; company data mainly comes from interviews, public information collection, third-party reliable databases, and price data mainly comes from various markets monitoring database.
Global Key Manufacturers of SiC Power Devices Include:
ROHM Semiconductor
Infineon
Mitsubishi Electric Corp
STMicroelectronics N.V.
Toshiba Corp
Fuji Electric Co Ltd
Infineon Technologies
ON Semiconductor Corp
SiC Power Devices Product Segment Include:
SiC Power Device Module
SiC Power Device Diodes
SiC Power Devices Product Application Include:
Motor Drivers
Power Supplies
Photovoltaics
Others
Chapter Scope
Chapter 1: Product Research Range, Product Types and Applications, Market Overview, Market Situation and Trends
Chapter 2: Global SiC Power Devices Industry PESTEL Analysis
Chapter 3: Global SiC Power Devices Industry Porter’s Five Forces Analysis
Chapter 4: Global SiC Power Devices Major Regional Market Size (Revenue, Sales, Price) and Forecast Analysis
Chapter 5: Global SiC Power Devices Market Size and Forecast by Type and Application Analysis
Chapter 6: North America SiC Power Devices Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)
Chapter 7: Europe SiC Power Devices Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)
Chapter 8: China SiC Power Devices Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)
Chapter 9: APAC (Excl. China) SiC Power Devices Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)
Chapter 10: Latin America SiC Power Devices Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)
Chapter 11: Middle East and Africa SiC Power Devices Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)
Chapter 12: Global SiC Power Devices Competitive Analysis of Key Manufacturers (Sales, Revenue, Market Share, Price, Regional Distribution and Industry Concentration)
Chapter 13: Key Company Profiles (Product Portfolio, Sales, Revenue, Price and Gross Margin)
Chapter 14: Industrial Chain Analysis, Include Raw Material Suppliers, Distributors and Customers
Chapter 15: Research Findings and Conclusion
Chapter 16: Methodology and Data Sources