Global IGBT and SiC Module for Automotive Competitive Landscape Professional Research Report 2025

Research Summary

IGBT (Insulated Gate Bipolar Transistor) and SiC (Silicon Carbide) modules are semiconductor devices used in automotive applications to control electrical power in systems like traction inverters, on-board chargers, and DC-DC converters in electric and hybrid vehicles. IGBT modules, consisting of multiple IGBT chips and diodes packaged together, are favored for their relatively low cost, high efficiency, and robustness in handling high voltages and currents, making them suitable for medium-power applications. In contrast, SiC modules utilize Silicon Carbide technology, offering superior performance with lower conduction losses, higher switching frequencies, and better thermal conductivity. SiC modules are ideal for high-power applications, such as high-voltage traction inverters, where maximizing efficiency and minimizing losses are crucial. Both IGBT and SiC modules play essential roles in improving the efficiency, performance, and range of electric and hybrid vehicles, with IGBT modules typically used in medium-power applications and SiC modules in high-power applications.

According to DIResearch's in-depth investigation and research, the global IGBT and SiC Module for Automotive market size was valued at XX Million USD in 2024 and is projected to reach XX Million USD by 2032, with a CAGR of XX% (2025-2032). Notably, the China market has changed rapidly in the past few years. By 2024, China's market size is expected to be XX Million USD, representing approximately XX% of the global market share. By 2032, it is anticipated to grow further to XX Million USD, contributing XX% to the worldwide market share.

The major global  manufacturers of IGBT and SiC Module for Automotive include Infineon, Mitsubishi Electric (Vincotech), Fuji Electric, Semikron Danfoss, Hitachi Power Semiconductor Device, Bosch, onsemi, Microchip (Microsemi), STMicroelectronics, Denso, Wolfspeed, Rohm, Navitas (GeneSiC), BYD, StarPower Semiconductor, Zhuzhou CRRC Times Electric, BASiC Semiconductor, Guangdong AccoPower Semiconductor, Grecon Semiconductor (Shanghai) Co., Ltd etc. The global players competition landscape in this report is divided into three tiers. The first tier comprises global leading enterprises that command a substantial market share, hold a dominant industry position, possess strong competitiveness and influence, and generate significant revenue. The second tier includes companies with a notable market presence and reputation; these firms actively follow industry leaders in product, service, or technological innovation and maintain a moderate revenue scale. The third tier consists of smaller companies with limited market share and lower brand recognition, primarily focused on local markets and generating comparatively lower revenue.

This report studies the market size, price trends and future development prospects of IGBT and SiC Module for Automotive. Focus on analysing the market share, product portfolio, prices, sales, revenue and gross profit margin of global major manufacturers, as well as the market status and trends of different product types and applications in the global IGBT and SiC Module for Automotive market. The report data covers historical data from 2020 to 2024, based year in 2025 and forecast data from 2026 to 2032.

The regions and countries in the report include North America, Europe, China, APAC (excl. China), Latin America and Middle East and Africa, covering the IGBT and SiC Module for Automotive market conditions and future development trends of key regions and countries, combined with industry-related policies and the latest technological developments, analyze the development characteristics of IGBT and SiC Module for Automotive industries in various regions and countries, help companies understand the development characteristics of each region, help companies formulate business strategies, and achieve the ultimate goal of the company's global development strategy.  

The data sources of this report mainly include the National Bureau of Statistics, customs databases, industry associations, corporate financial reports, third-party databases, etc. Among them, macroeconomic data mainly comes from the National Bureau of Statistics, International Economic Research Organization; industry statistical data mainly come from industry associations; company data mainly comes from interviews, public information collection, third-party reliable databases, and price data mainly comes from various markets monitoring database.

Global Key Manufacturers of IGBT and SiC Module for Automotive Include:

Infineon

Mitsubishi Electric (Vincotech)

Fuji Electric

Semikron Danfoss

Hitachi Power Semiconductor Device

Bosch

onsemi

Microchip (Microsemi)

STMicroelectronics

Denso

Wolfspeed

Rohm

Navitas (GeneSiC)

BYD

StarPower Semiconductor

Zhuzhou CRRC Times Electric

BASiC Semiconductor

Guangdong AccoPower Semiconductor

Grecon Semiconductor (Shanghai) Co., Ltd

IGBT and SiC Module for Automotive Product Segment Include:

Automotive IGBT Modules

Automotive SiC Modules

IGBT and SiC Module for Automotive Product Application Include:

Main Inverter (Electric Traction)

OBC

DC/DC Converter for EV/HEV

EV Charging

Chapter Scope

Chapter 1: Product Research Range, Product Types and Applications, Market Overview, Market Situation and Trends

Chapter 2: Global IGBT and SiC Module for Automotive Industry PESTEL Analysis

Chapter 3: Global IGBT and SiC Module for Automotive Industry Porter’s Five Forces Analysis

Chapter 4: Global IGBT and SiC Module for Automotive Major Regional Market Size (Revenue, Sales, Price) and Forecast Analysis

Chapter 5: Global IGBT and SiC Module for Automotive Market Size and Forecast by Type and Application Analysis

Chapter 6: North America IGBT and SiC Module for Automotive Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)

Chapter 7: Europe IGBT and SiC Module for Automotive Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)

Chapter 8: China IGBT and SiC Module for Automotive Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)

Chapter 9: APAC (Excl. China) IGBT and SiC Module for Automotive Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)

Chapter 10: Latin America IGBT and SiC Module for Automotive Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)

Chapter 11: Middle East and Africa IGBT and SiC Module for Automotive Competitive Analysis (Market Size, Key Players and Market Share, Product Type and Application Segment Analysis, Countries Analysis)

Chapter 12: Global IGBT and SiC Module for Automotive Competitive Analysis of Key Manufacturers (Sales, Revenue, Market Share, Price, Regional Distribution and Industry Concentration)

Chapter 13: Key Company Profiles (Product Portfolio, Sales, Revenue, Price and Gross Margin)

Chapter 14: Industrial Chain Analysis, Include Raw Material Suppliers, Distributors and Customers

Chapter 15: Research Findings and Conclusion

Chapter 16: Methodology and Data Sources