Intelligent Power Module Market, By Power Device (IGBT and MOSFET), By Voltage Rating (0 V to 599 V, 600 V to 1,199 V, and 1,200 V and above), By Application (Automotive, Industrial, Consumer Electronics, Energy & Utility, IT & Telecommunication, and Othe

Intelligent Power Module Market, By Power Device (IGBT and MOSFET), By Voltage Rating (0 V to 599 V, 600 V to 1,199 V, and 1,200 V and above), By Application (Automotive, Industrial, Consumer Electronics, Energy & Utility, IT & Telecommunication, and Others), By Geography (North America, Latin America, Asia Pacific, Europe, Middle East, and Africa)

The global intelligent power module market has been growing rapidly over the past few years owing to the rising demand for energy efficient and compact power electronic components across various industrial verticals. Intelligent power modules integrate vital power components such as MOSFETs, diodes, and drivers with protection mechanisms and monitoring facilities on a single chip, thereby providing an all-in-one solution for power management and conversion applications. They help reduce design complexity, footprint and cost of power electronic systems while ensuring optimal performance. Rising adoption of electric and hybrid vehicles, increasing deployment of renewable energy sources and growing automation across industries have been driving the need for more advanced power electronics which is expected to propel the growth of the intelligent power module market in the coming years.

Market Dynamics:

Growing adoption of electric vehicles to reduce emissions and dependency on fossil fuels has been a key driver for intelligent power module market. Rising demand for advanced power control in robotics, 3D printing, machine tools and other industrial automated equipment’s is also fueling market growth. However, high initial costs associated with manufacturing of intelligent power modules and availability of substitutes are expected to hinder the market to some extent. Ongoing R&D in the area of wide bandgap semiconductors like GaN and SiC is expected to offer new opportunities for development of advanced intelligent power modules with improved efficiencies in the near future.

Key features of the study:

• This report provides in-depth analysis of the global intelligent power module market, and provides market size (US$ Bn) and compound annual growth rate (CAGR%) for the forecast period (2024–2031), considering 2023 as the base year
• It elucidates potential revenue opportunities across different segments and explains attractive investment proposition matrices for this market
• This study also provides key insights about market drivers, restraints, opportunities, new product launches or approval, market trends, regional outlook, and competitive strategies adopted by key players
• It profiles key players in the global intelligent power module market based on the following parameters – company highlights, products portfolio, key highlights, financial performance, and strategies
• Key companies covered as a part of this study include Avalanche Technology Inc., Fuji Electric Co., Ltd., Hitachi, Ltd., Infineon Technologies AG, Intelligent Power and Energy Research Corporation, Mitsubishi Electric Corporation, ON Semiconductor, Powerex, Inc., Pre-Switch, Inc., Renesas Electronics Corporation, ROHM Semiconductor, Semikron, Semiconductor Components Industries, LLC, STMicroelectronics, and Toshiba Electronic Devices & Storage Corporation
• Insights from this report would allow marketers and the management authorities of the companies to make informed decisions regarding their future product launches, type up-gradation, market expansion, and marketing tactics
• The global intelligent power module market report caters to various stakeholders in this industry including investors, suppliers, product manufacturers, distributors, new entrants, and financial analysts
• Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the global intelligent power module market.

Detailed Segmentation:

• By Power Device
• IGBT
• MOSFET
• By Voltage Rating
• 0 V to 599 V
• 600 V to 1,199 V
• 1,200 V and above
• By Application
• Automotive
• Industrial
• Consumer Electronics
• Energy & Utility
• IT & Telecommunication
• Others
• By Region:
• North America
• Europe
• Asia Pacific
• Latin America
• Middle East
• Africa
• Key Players Insights
• Avalanche Technology Inc.
• Fuji Electric Co., Ltd.
• Hitachi, Ltd.
• Infineon Technologies AG
• Intelligent Power and Energy Research Corporation
• Mitsubishi Electric Corporation
• ON Semiconductor
• Powerex, Inc.
• Pre-Switch, Inc.
• Renesas Electronics Corporation
• ROHM Semiconductor
• Semikron
• Semiconductor Components Industries, LLC
• STMicroelectronics
• Toshiba Electronic Devices & Storage Corporation