Global Discrete Semiconductor Market Size study & Forecast, by Type (Diodes, Transistors, Thyristors, Modules), by Application (Networking & Communication, Automotive, Consumer Electronics, Industrial, Others) and Regional Analysis, 2023-2030

Global Discrete Semiconductor Market Size study & Forecast, by Type (Diodes, Transistors, Thyristors, Modules), by Application (Networking & Communication, Automotive, Consumer Electronics, Industrial, Others) and Regional Analysis, 2023-2030

Global Discrete Semiconductor Market is valued approximately USD 49.11 billion in 2022 and is anticipated to grow with a healthy growth rate of more than 8.1% over the forecast period 2023-2030. Discrete semiconductor devices refer to individual semiconductor components designed to perform specific electronic functions. They encompass various components such as IGBTs, MOSFETs, thyristors, diodes, and rectifiers. Power discrete semiconductors, particularly IGBTs and MOSFETs, are commonly used in electronic and electrical equipment for converting alternating current. Market is being driven by various factors, including the rising demand for high-energy and power-efficient devices, the prevalence of wireless and portable electronics, the need for green energy generation, the quick expansion of the automotive industry, the increased use of MOSFETs and IGBTs in electronics and automobiles and the expanding development of ASICs.

Moreover, the growing demand in the automotive industry is anticipated to create the lucrative demand for the market over the forecast period. For instance, in December 2022, STMicroelectronics introduced new silicon-carbide (SiC) high-power modules aiming to enhance the performance and driving range of electric vehicles. These modules, based on SiC MOSFET technology, have been chosen by Hyundai for integration into their E-GMP electric vehicle platform, including models such as the KIA EV6 also In a in August 2022, Renesas Electronics Corporation unveiled a new generation of Si-IGBTs. These advanced IGBTs, known as AE5- generation, are targeted for use in next-generation EV inverters. Renesas plans to commence mass production of the AE5-generation IGBTs in the first half of 2023 at their manufacturing facility in Naka, Japan. Additionally, technological advancements in manufacturing processes and an upsurge in R&D activities are set to offer new opportunities for the discrete semiconductor market to expand in the forecast period. However, continuously increasing prices of Discrete Semiconductor stifling market growth throughout the forecast period of 2023-2030.

The key regions considered for the Global Discrete Semiconductor Market study includes Asia Pacific, North America, Europe, Latin America, and Middle East & Africa. North America dominated the market in 2022 owing to emerging technologies such as the Internet of Things (IoT), growing number of electronic devices, and rising adoption of electric vehicles in the region. According to the Argonne National Laboratory in 2021, sales of hybrid electric vehicles (HEVs) in the United States reached 97,972 in FY2023, showing a significant 36.4% rise compared to April 2022. Toyota led the way with a 44.3% market share of total HEV sales during this period. Asia Pacific is expected to grow significantly during the forecast period, owing to rising demand for portable and wireless electronic devices and the rapid expansion of the automotive industry, is fueling market growth across the region.

Major market player included in this report are:
Nexperia
Infineon Technologies AG
Diodes Incorporated
Semiconductor Components Industries
ABB India Ltd.
D3 Semiconductor
Toshiba Electronic Devices & Storage Corporation
NXP Semiconductors
Qualcomm Technologies Inc.
STMicroelectronics N.V

Recent Developments in the Market:
 In October 2022, Infineon Technologies has introduced the CoolMOS PFD7 high-voltage MOSFET family, aiming to meet the growing market requirements for energy-efficient products and improved form factors. This new series, operating at 950 V, incorporates a fast body diode, enhancing device reliability and reducing the bill of materials. It offers exceptional performance and user-friendly features, setting a new standard in 950 V super junction (SJ) technology.

Global Discrete Semiconductor Market Report Scope:
 Historical Data – 2020 - 2021
 Base Year for Estimation – 2022
 Forecast period - 2023-2030
 Report Coverage - Revenue forecast, Company Ranking, Competitive Landscape, Growth factors, and Trends
 Segments Covered - Type, Application, Region
 Regional Scope - North America; Europe; Asia Pacific; Latin America; Middle East & Africa

The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within countries involved in the study.

The report also caters detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the market. Additionally, it also incorporates potential opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players.

The detailed segments and sub-segment of the market are explained below:

By Type:
Diodes
Transistors
Thyristors
Modules
By Application:
Networking & Communication
Automotive
Consumer Electronics
Industrial
Others
By Region:

North America
U.S.
Canada

Europe
UK
Germany
France
Spain
Italy
ROE

Asia Pacific
China
India
Japan
Australia
South Korea
RoAPAC

Latin America
Brazil
Mexico

Middle East & Africa
Saudi Arabia
South Africa
Rest of Middle East & Africa

Companies Mentioned
Nexperia
Infineon Technologies AG
Diodes Incorporated
Semiconductor Components Industries
ABB India Ltd.
D3 Semiconductor
Toshiba Electronic Devices & Storage Corporation
NXP Semiconductors
Qualcomm Technologies Inc.
STMicroelectronics N.V

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