Global SiC Substrates Market by Size, by Type, by Application, by Region, History and Forecast 2019-2030

Global SiC Substrates Market by Size, by Type, by Application, by Region, History and Forecast 2019-2030

Summary

Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.
SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.
Alpha silicon carbide (α-SiC) is the most commonly encountered polymorph; it is formed at temperatures greater than 1700 °C and has a hexagonal crystal structure (similar to Wurtzite). The beta modification (β-SiC), with a zinc blende crystal structure (similar to diamond), is formed at temperatures below 1700 °C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for heterogeneous catalysts, owing to its higher surface area compared to the alpha form.
For now, the main application of silicon carbide substrate in LED solid-state lighting field and high-frequency devices
As the basic material of the third generation semiconductor industry, silicon carbide substrate has a high application prospect and industrial value, and has an important strategic position in the development of China's semiconductor industry. For a long time, the core technology and market of silicon carbide substrate are basically monopolized by developed countries in Europe and the United States, and the larger the product size, the higher the level of technical parameters, the more obvious its technical advantages. China's silicon carbide crystal research only started in the late 1990s, and failed to achieve industrialization due to technical bottlenecks and capacity limits in the early stage of development, which is far behind the international advanced level. Since the beginning of the 21st century, under the support and guidance of the national industrial policy, the development of China's silicon carbide wafer industry has been greatly accelerated. Excellent silicon carbide substrate manufacturing enterprises with independent intellectual property rights such as Tianke Heda and Shandong Tianyue have emerged successively. Domestic enterprises to technology-driven development, deep cultivation of silicon carbide wafer and crystal manufacturing, gradually master 2 inches to 6 inches of silicon carbide crystal and wafer manufacturing technology, break the domestic silicon carbide wafer manufacturing technology gap and gradually narrow the technology gap with the developed countries.

According to APO Research, The global SiC Substrates market is projected to grow from US$ million in 2024 to US$ million by 2030, at a Compound Annual Growth Rate (CAGR) of % during the forecast period.

The US & Canada market for SiC Substrates is estimated to increase from $ million in 2024 to reach $ million by 2030, at a CAGR of % during the forecast period of 2025 through 2030.

Asia-Pacific market for SiC Substrates is estimated to increase from $ million in 2024 to reach $ million by 2030, at a CAGR of % during the forecast period of 2025 through 2030.

The China market for SiC Substrates is estimated to increase from $ million in 2024 to reach $ million by 2030, at a CAGR of % during the forecast period of 2025 through 2030.

Europe market for SiC Substrates is estimated to increase from $ million in 2024 to reach $ million by 2030, at a CAGR of % during the forecast period of 2025 through 2030.

The major global manufacturers of SiC Substrates include Cree (Wolfspeed), II-VI Advanced Materials, TankeBlue Semiconductor, SICC Materials, Beijing Cengol Semiconductor, Showa Denko (NSSMC), Hebei Synlight Crystal, Norstel and ROHM, etc. In 2023, the world's top three vendors accounted for approximately % of the revenue.

In terms of production side, this report researches the SiC Substrates production, growth rate, market share by manufacturers and by region (region level and country level), from 2019 to 2024, and forecast to 2030.

In terms of consumption side, this report focuses on the sales of SiC Substrates by region (region level and country level), by company, by type and by application. from 2019 to 2024 and forecast to 2030.

This report presents an overview of global market for SiC Substrates, capacity, output, revenue and price. Analyses of the global market trends, with historic market revenue or sales data for 2019 - 2023, estimates for 2024, and projections of CAGR through 2030.

This report researches the key producers of SiC Substrates, also provides the consumption of main regions and countries. Of the upcoming market potential for SiC Substrates, and key regions or countries of focus to forecast this market into various segments and sub-segments. Country specific data and market value analysis for the U.S., Canada, Mexico, Brazil, China, Japan, South Korea, Southeast Asia, India, Germany, the U.K., Italy, Middle East, Africa, and Other Countries.

This report focuses on the SiC Substrates sales, revenue, market share and industry ranking of main manufacturers, data from 2019 to 2024. Identification of the major stakeholders in the global SiC Substrates market, and analysis of their competitive landscape and market positioning based on recent developments and segmental revenues. This report will help stakeholders to understand the competitive landscape and gain more insights and position their businesses and market strategies in a better way.

This report analyzes the segments data by type and by application, sales, revenue, and price, from 2019 to 2030. Evaluation and forecast the market size for SiC Substrates sales, projected growth trends, production technology, application and end-user industry.

SiC Substrates segment by Company

Cree (Wolfspeed)
II-VI Advanced Materials
TankeBlue Semiconductor
SICC Materials
Beijing Cengol Semiconductor
Showa Denko (NSSMC)
Hebei Synlight Crystal
Norstel
ROHM
SK Siltron
SiC Substrates segment by Inch
4 Inch
6 Inch
8 Inch
SiC Substrates segment by Application

Power component
RF device
Others
SiC Substrates segment by Region

North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia

Asia-Pacific
China
Japan
South Korea
India
Australia
China Taiwan
Indonesia
Thailand
Malaysia
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
UAE

Study Objectives

1. To analyze and research the global status and future forecast, involving, production, value, consumption, growth rate (CAGR), market share, historical and forecast.
2. To present the key manufacturers, capacity, production, revenue, market share, and Recent Developments.
3. To split the breakdown data by regions, type, manufacturers, and Application.
4. To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints, and risks.
5. To identify significant trends, drivers, influence factors in global and regions.
6. To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.

Reasons to Buy This Report

1. This report will help the readers to understand the competition within the industries and strategies for the competitive environment to enhance the potential profit. The report also focuses on the competitive landscape of the global SiC Substrates market, and introduces in detail the market share, industry ranking, competitor ecosystem, market performance, new product development, operation situation, expansion, and acquisition. etc. of the main players, which helps the readers to identify the main competitors and deeply understand the competition pattern of the market.
2. This report will help stakeholders to understand the global industry status and trends of SiC Substrates and provides them with information on key market drivers, restraints, challenges, and opportunities.
3. This report will help stakeholders to understand competitors better and gain more insights to strengthen their position in their businesses. The competitive landscape section includes the market share and rank (in volume and value), competitor ecosystem, new product development, expansion, and acquisition.
4. This report stays updated with novel technology integration, features, and the latest developments in the market.
5. This report helps stakeholders to gain insights into which regions to target globally.
6. This report helps stakeholders to gain insights into the end-user perception concerning the adoption of SiC Substrates.
7. This report helps stakeholders to identify some of the key players in the market and understand their valuable contribution.

Chapter Outline

Chapter 1: Provides an overview of the SiC Substrates market, including product definition, global market growth prospects, production value, capacity, and average price forecasts (2019-2030).
Chapter 2: Analysis key trends, drivers, challenges, and opportunities within the global SiC Substrates industry.
Chapter 3: Detailed analysis of SiC Substrates market competition landscape. Including SiC Substrates manufacturers' output value, output and average price from 2019 to 2024, as well as competition analysis indicators such as origin, product type, application, merger and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 7: Production/Production Value of SiC Substrates by region. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 8: Consumption of SiC Substrates in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 9: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 10: Concluding Insights of the report.