Global SiC & GaN Power Devices Market by Size, by Type, by Application, by Region, History and Forecast 2020-2031

Summary

Wide-bandgap semiconductors (WBG or WBGS) are semiconductor materials which have a relatively large band gap compared to typical semiconductors. Silicon Carbide (SiC) and gallium nitride (GaN) Power Devices are the mainly used Wide-bandgap semiconductors materials.

According to APO Research, The global SiC & GaN Power Devices market is projected to grow from US$ million in 2025 to US$ million by 2031, at a Compound Annual Growth Rate (CAGR) of % during the forecast period.

The US & Canada market for SiC & GaN Power Devices is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2025 through 2031.

Asia-Pacific market for SiC & GaN Power Devices is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2025 through 2031.

The China market for SiC & GaN Power Devices is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2025 through 2031.

Europe market for SiC & GaN Power Devices is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2025 through 2031.

The major global manufacturers of SiC & GaN Power Devices include Infineon, Rohm, Mitsubishi, STMicro, Fuji, Toshiba, Microchip Technology, United Silicon Carbide Inc. and GeneSic, etc. In 2024, the world's top three vendors accounted for approximately % of the revenue.

In terms of production side, this report researches the SiC & GaN Power Devices production, growth rate, market share by manufacturers and by region (region level and country level), from 2020 to 2025, and forecast to 2031.

In terms of consumption side, this report focuses on the sales of SiC & GaN Power Devices by region (region level and country level), by company, by type and by application. from 2020 to 2025 and forecast to 2031.

This report presents an overview of global market for SiC & GaN Power Devices, capacity, output, revenue and price. Analyses of the global market trends, with historic market revenue or sales data for 2020 - 2024, estimates for 2025, and projections of CAGR through 2031.

This report researches the key producers of SiC & GaN Power Devices, also provides the consumption of main regions and countries. Of the upcoming market potential for SiC & GaN Power Devices, and key regions or countries of focus to forecast this market into various segments and sub-segments. Country specific data and market value analysis for the U.S., Canada, Mexico, Brazil, China, Japan, South Korea, Southeast Asia, India, Germany, the U.K., Italy, Middle East, Africa, and Other Countries.

This report focuses on the SiC & GaN Power Devices sales, revenue, market share and industry ranking of main manufacturers, data from 2020 to 2025. Identification of the major stakeholders in the global SiC & GaN Power Devices market, and analysis of their competitive landscape and market positioning based on recent developments and segmental revenues. This report will help stakeholders to understand the competitive landscape and gain more insights and position their businesses and market strategies in a better way.

This report analyzes the segments data by type and by application, sales, revenue, and price, from 2020 to 2031. Evaluation and forecast the market size for SiC & GaN Power Devices sales, projected growth trends, production technology, application and end-user industry.

SiC & GaN Power Devices Segment by Company

Infineon
Rohm
Mitsubishi
STMicro
Fuji
Toshiba
Microchip Technology
United Silicon Carbide Inc.
GeneSic
Efficient Power Conversion (EPC)
GaN Systems
VisIC Technologies LTD

SiC & GaN Power Devices Segment by Type

GaN
SiC

SiC & GaN Power Devices Segment by Application

Consumer Electronics
Automotive & Transportation
Industrial Use
Others

SiC & GaN Power Devices Segment by Region

North America
United States
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Spain
Netherlands
Switzerland
Sweden
Poland
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Southeast Asia
South America
Brazil
Argentina
Chile
Middle East & Africa
Egypt
South Africa
Israel
Türkiye
GCC Countries

Study Objectives

1. To analyze and research the global status and future forecast, involving, production, value, consumption, growth rate (CAGR), market share, historical and forecast.
2. To present the key manufacturers, capacity, production, revenue, market share, and Recent Developments.
3. To split the breakdown data by regions, type, manufacturers, and Application.
4. To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints, and risks.
5. To identify significant trends, drivers, influence factors in global and regions.
6. To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.

Reasons to Buy This Report

1. This report will help the readers to understand the competition within the industries and strategies for the competitive environment to enhance the potential profit. The report also focuses on the competitive landscape of the global SiC & GaN Power Devices market, and introduces in detail the market share, industry ranking, competitor ecosystem, market performance, new product development, operation situation, expansion, and acquisition. etc. of the main players, which helps the readers to identify the main competitors and deeply understand the competition pattern of the market.
2. This report will help stakeholders to understand the global industry status and trends of SiC & GaN Power Devices and provides them with information on key market drivers, restraints, challenges, and opportunities.
3. This report will help stakeholders to understand competitors better and gain more insights to strengthen their position in their businesses. The competitive landscape section includes the market share and rank (in volume and value), competitor ecosystem, new product development, expansion, and acquisition.
4. This report stays updated with novel technology integration, features, and the latest developments in the market.
5. This report helps stakeholders to gain insights into which regions to target globally.
6. This report helps stakeholders to gain insights into the end-user perception concerning the adoption of SiC & GaN Power Devices.
7. This report helps stakeholders to identify some of the key players in the market and understand their valuable contribution.

Chapter Outline

Chapter 1: Provides an overview of the SiC & GaN Power Devices market, including product definition, global market growth prospects, production value, capacity, and average price forecasts (2020-2031).
Chapter 2: Analysis key trends, drivers, challenges, and opportunities within the global SiC & GaN Power Devices industry.
Chapter 3: Detailed analysis of SiC & GaN Power Devices market competition landscape. Including SiC & GaN Power Devices manufacturers' output value, output and average price from 2020 to 2025, as well as competition analysis indicators such as origin, product type, application, merger and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product production/output, value, price, gross margin, product introduction, recent development, etc.
Chapter 7: Production/Production Value of SiC & GaN Power Devices by region. It provides a quantitative analysis of the market size and development potential of each region in the next six years.
Chapter 8: Consumption of SiC & GaN Power Devices in regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and production of each country in the world.
Chapter 9: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 10: Concluding Insights of the report.

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