Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market by Size, by Type, by Application, by Region, History and Forecast 2020-2031

Summary

The power semiconductor is the core of electronic device electrical energy conversion and circuit control. In essence, it uses the unidirectional conductivity of the semiconductor to realize the function of power switch and power conversion. Whether it is hydropower, nuclear power, thermal power or wind power, or even the chemical energy provided by various batteries, most of them cannot be directly used. More than 75% of the electrical energy applications require power conversion by power semiconductor devices before they can be used by equipment.

According to APO Research, The global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market is projected to grow from US$ million in 2025 to US$ million by 2031, at a Compound Annual Growth Rate (CAGR) of % during the forecast period.

The US & Canada market for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2025 through 2031.

Asia-Pacific market for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2025 through 2031.

The China market for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2025 through 2031.

Europe market for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors is estimated to increase from $ million in 2025 to reach $ million by 2031, at a CAGR of % during the forecast period of 2025 through 2031.

The major global companies of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors include Infineon, CREE (Wolfspeed), Roma Semiconductor Group, STMicroelectronics, ON Semiconductor, Mitsubishi Electric, Fuji Electric, Littelfuse and Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd., etc. In 2024, the world's top three vendors accounted for approximately % of the revenue.

Report Includes


This report presents an overview of global market for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors, market size. Analyses of the global market trends, with historic market revenue data for 2020 - 2024, estimates for 2025, and projections of CAGR through 2031.

This report researches the key producers of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors, also provides the revenue of main regions and countries. Of the upcoming market potential for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors, and key regions or countries of focus to forecast this market into various segments and sub-segments. Country specific data and market value analysis for the U.S., Canada, Mexico, Brazil, China, Japan, South Korea, Southeast Asia, India, Germany, the U.K., Italy, Middle East, Africa, and Other Countries.

This report focuses on the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors revenue, market share and industry ranking of main manufacturers, data from 2020 to 2025. Identification of the major stakeholders in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market, and analysis of their competitive landscape and market positioning based on recent developments and segmental revenues. This report will help stakeholders to understand the competitive landscape and gain more insights and position their businesses and market strategies in a better way.

This report analyzes the segments data by Type and by Application, revenue, and growth rate, from 2020 to 2031. Evaluation and forecast the market size for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors revenue, projected growth trends, production technology, application and end-user industry.


Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Segment by Company

Infineon
CREE (Wolfspeed)
Roma Semiconductor Group
STMicroelectronics
ON Semiconductor
Mitsubishi Electric
Fuji Electric
Littelfuse
Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd.
Shenzhen Basic Semiconductor Co., Ltd.

Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Segment by Type

Silicon Carbide Power Semiconductor
Gallium Nitride Power Semiconductor

Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Segment by Application

Consumer Electronics
New Energy Grid Connection
Rail
Industrial Motor
Ups Power Supply
New Energy Vehicles
Other

Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Segment by Region

North America
United States
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Spain
Netherlands
Switzerland
Sweden
Poland
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Southeast Asia
South America
Brazil
Argentina
Chile
Middle East & Africa
Egypt
South Africa
Israel
Türkiye
GCC Countries

Study Objectives

1. To analyze and research the global status and future forecast, involving, production, value, consumption, growth rate (CAGR), market share, historical and forecast.
2. To present the key manufacturers, capacity, production, revenue, market share, and Recent Developments.
3. To split the breakdown data by regions, type, manufacturers, and Application.
4. To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints, and risks.
5. To identify significant trends, drivers, influence factors in global and regions.
6. To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.

Reasons to Buy This Report

1. This report will help the readers to understand the competition within the industries and strategies for the competitive environment to enhance the potential profit. The report also focuses on the competitive landscape of the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market, and introduces in detail the market share, industry ranking, competitor ecosystem, market performance, new product development, operation situation, expansion, and acquisition. etc. of the main players, which helps the readers to identify the main competitors and deeply understand the competition pattern of the market.
2. This report will help stakeholders to understand the global industry status and trends of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors and provides them with information on key market drivers, restraints, challenges, and opportunities.
3. This report will help stakeholders to understand competitors better and gain more insights to strengthen their position in their businesses. The competitive landscape section includes the market share and rank (in volume and value), competitor ecosystem, new product development, expansion, and acquisition.
4. This report stays updated with novel technology integration, features, and the latest developments in the market.
5. This report helps stakeholders to gain insights into which regions to target globally.
6. This report helps stakeholders to gain insights into the end-user perception concerning the adoption of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors.
7. This report helps stakeholders to identify some of the key players in the market and understand their valuable contribution.

Chapter Outline

Chapter 1: Introduces the report scope of the report, executive summary of different market segments (product type, application, etc), including the market size of each market segment, future development potential, and so on. Revenue of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors in global and regional level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and capacity of each country in the world. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Analysis key trends, drivers, challenges, and opportunities within the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors industry.
Chapter 3: Detailed analysis of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors companies' competitive landscape, revenue, market share and industry ranking, latest development plan, merger, and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the revenue, and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the revenue, and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Provides profiles of key companies, introducing the basic situation of the main companies in the market in detail, including product descriptions and specifications, Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductorsrevenue, gross margin, and recent development, etc.
Chapter 7: North America (US & Canada) by type, by application and by country, revenue for each segment.
Chapter 8: Europe by type, by application and by country, revenue for each segment.
Chapter 9: China by type, and by application, revenue for each segment.
Chapter 10: Asia (excluding China) by type, by application and by region, revenue for each segment.
Chapter 11: South America, Middle East & Africa by type, by application and by country, revenue for each segment.
Chapter 12: Concluding Insights of the report.

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