Global GaN Power Devices Market Size, Manufacturers, Growth Analysis Industry Forecast to 2030

Global GaN Power Devices Market Size, Manufacturers, Growth Analysis Industry Forecast to 2030

Summary

GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.

According to APO Research, The global GaN Power Devices market is projected to grow from US$ million in 2024 to US$ million by 2030, at a Compound Annual Growth Rate (CAGR) of % during the forecast period.

North American market for GaN Power Devices is estimated to increase from $ million in 2024 to reach $ million by 2030, at a CAGR of % during the forecast period of 2025 through 2030.

Asia-Pacific market for GaN Power Devices is estimated to increase from $ million in 2024 to reach $ million by 2030, at a CAGR of % during the forecast period of 2025 through 2030.

The China market for GaN Power Devices is estimated to increase from $ million in 2024 to reach $ million by 2030, at a CAGR of % during the forecast period of 2025 through 2030.

Europe market for GaN Power Devices is estimated to increase from $ million in 2024 to reach $ million by 2030, at a CAGR of % during the forecast period of 2025 through 2030.

The major global manufacturers of GaN Power Devices include Fujitsu, Toshiba, Koninklijke Philips, Texas Instruments, EPIGAN, NTT Advanced Technology, RF Micro Devices, Cree Incorporated and Aixtron, etc. In 2023, the world's top three vendors accounted for approximately % of the revenue.

This report presents an overview of global market for GaN Power Devices, sales, revenue and price. Analyses of the global market trends, with historic market revenue or sales data for 2019 - 2023, estimates for 2024, and projections of CAGR through 2030.

This report researches the key producers of GaN Power Devices, also provides the sales of main regions and countries. Of the upcoming market potential for GaN Power Devices, and key regions or countries of focus to forecast this market into various segments and sub-segments. Country specific data and market value analysis for the U.S., Canada, Mexico, Brazil, China, Japan, South Korea, Southeast Asia, India, Germany, the U.K., Italy, Middle East, Africa, and Other Countries.

This report focuses on the GaN Power Devices sales, revenue, market share and industry ranking of main manufacturers, data from 2019 to 2024. Identification of the major stakeholders in the global GaN Power Devices market, and analysis of their competitive landscape and market positioning based on recent developments and segmental revenues. This report will help stakeholders to understand the competitive landscape and gain more insights and position their businesses and market strategies in a better way.

This report analyzes the segments data by Type and by Application, sales, revenue, and price, from 2019 to 2030. Evaluation and forecast the market size for GaN Power Devices sales, projected growth trends, production technology, application and end-user industry.

GaN Power Devices segment by Company

Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Aixtron
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors
Efficient Power Conversion (EPC)
GaN Systems
Infineon
GaN Power Devices segment by Type

600V
Others
GaN Power Devices segment by Application

Server and Other IT Equipments
High-Efficiency and Stable Power Supplies
Rapidly Expanding HEV/EV Devices
GaN Power Devices segment by Region

North America
U.S.
Canada
Europe
Germany
France
U.K.
Italy
Russia
Asia-Pacific
China
Japan
South Korea
India
Australia
China Taiwan
Indonesia
Thailand
Malaysia
Latin America
Mexico
Brazil
Argentina
Middle East & Africa
Turkey
Saudi Arabia
UAE

Study Objectives

1. To analyze and research the global GaN Power Devices status and future forecast, involving, sales, revenue, growth rate (CAGR), market share, historical and forecast.
2. To present the key manufacturers, sales, revenue, market share, and Recent Developments.
3. To split the breakdown data by regions, type, manufacturers, and Application.
4. To analyze the global and key regions GaN Power Devices market potential and advantage, opportunity and challenge, restraints, and risks.
5. To identify GaN Power Devices significant trends, drivers, influence factors in global and regions.
6. To analyze GaN Power Devices competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.

Reasons to Buy This Report

1. This report will help the readers to understand the competition within the industries and strategies for the competitive environment to enhance the potential profit. The report also focuses on the competitive landscape of the global GaN Power Devices market, and introduces in detail the market share, industry ranking, competitor ecosystem, market performance, new product development, operation situation, expansion, and acquisition. etc. of the main players, which helps the readers to identify the main competitors and deeply understand the competition pattern of the market.
2. This report will help stakeholders to understand the global industry status and trends of GaN Power Devices and provides them with information on key market drivers, restraints, challenges, and opportunities.
3. This report will help stakeholders to understand competitors better and gain more insights to strengthen their position in their businesses. The competitive landscape section includes the market share and rank (in sales and value), competitor ecosystem, new product development, expansion, and acquisition.
4. This report stays updated with novel technology integration, features, and the latest developments in the market.
5. This report helps stakeholders to gain insights into which regions to target globally.
6. This report helps stakeholders to gain insights into the end-user perception concerning the adoption of GaN Power Devices.
7. This report helps stakeholders to identify some of the key players in the market and understand their valuable contribution.

Chapter Outline

Chapter 1: Provides an overview of the GaN Power Devices market, including product definition, global market growth prospects, sales value, sales volume, and average price forecasts (2019-2030).
Chapter 2: Analysis key trends, drivers, challenges, and opportunities within the global GaN Power Devices industry.
Chapter 3: Detailed analysis of GaN Power Devices manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 4: Provides the analysis of various market segments by type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 5: Provides the analysis of various market segments by application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 6: Sales and value of GaN Power Devices in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 7: Sales and value of GaN Power Devices in country level. It provides sigmate data by type, and by application for each country/region.
Chapter 8: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 9: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 10: Concluding Insights.